MC68HC08GP32
Technical Data
MC68HC908GP32
•
MC68HC08GP32
—
Rev. 6
404
MC68HC08GP32
MOTOROLA
A.8.3 3.0-V DC Electrical Characteristics
Figure A-5. Typical Operating I
DD
Characteristic
(1)
1. V
DD
= 3.0 Vdc
±
10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
Symbol
Min
Typ
(2)
2. Typical values reflect average measurements at midpoint of voltage range, 25
°
C only.
Max
Unit
V
DD
supply current
Run
(3)
Wait
(4)
Stop
(5)
25
°
C
25
°
C with TBM enabled
(6)
25
°
C with TBM enabled
(7)
25
°
C with LVI and TBM enabled
(6)
–40
°
C to 85
°
C
–40
°
C to 85
°
C with TBM enabled
(7)
–40
°
C to 85
°
C
with LVI and TBM enabled
(6)
3. Run (operating) I
DD
measured using external square wave clock source (f
OSC
= 16.4 MHz). All inputs 0.2V from rail. No
dc loads. Less than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
affects run I
DD
. Measured with all modules enabled.
4. Wait I
DD
measured using external square wave clock source (f
OSC
= 16.4 MHz). All inputs 0.2 V from rail. No dc loads.
Less than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects
wait I
DD
. Measured with PLL and LVI enabled.
5. Stop I
DD
is measured with OSC1 = V
SS
.
6. Stop I
DD
with TBM enabled is measured using an external square wave clock source (f
OSC
= 16.4 MHz). All inputs 0.2V
from rail. No dc loads. Less than 100 pF on all outputs. All inputs configured as inputs.
7. Measured with TBM enabled using 32kHz crystal.
I
DD
—
—
—
—
—
—
—
—
—
5.2
1.65
1
12
25
200
—
—
300
8
4
—
—
—
—
5
50
—
mA
mA
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
Low-voltage inhibit, trip falling voltage
V
TRIPF
2.45
2.60
2.70
V
Low-voltage inhibit, trip rising voltage
V
TRIPR
2.50
2.66
2.80
V
Low-voltage inhibit reset/recover hysteresis
(V
TRIPF
+ V
HYS
= V
TRIPR
)
V
HYS
—
60
—
mV
Notes:
0
2
4
6
8
10
12
1
2
3
4
5
6
7
8
9
f
BUS
(MHz)
I
DD
(m
A)
14
16
5.5 V
3.3 V
F
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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.
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