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Section 3: LPTLib command reference
S530/S540 KTE Linear Parametric Test Library (LPTLib) User's Manual
3-18 S530-900-01 Rev. E / September 2017
Example
double res1[14], res2[14];
.
conpin(SMU1, 1, 0);
conpin(SMU2, 2, 0);
conpin(GND, 3, 0);
forcev(SMU1, 4.0); /* Apply 4 V to gate. */
smeasi(SMU2, res1); /* Measure drain current in */
/* each step; store results */
/* in res1 array. */
sweepv(SMU2, 0.0, 14.0, 13, 2.0E-2); /* Make */
/* 14 measurements */
/* over a range of 0 V to 14 V. */
clrscn(); /* Clear smeasi. */
forcev(SMU1, 5.0); /* Apply 5 V to gate. */
smeasi(SMU2, res2); /* Measure drain current in */
/* each step; store results in */
/* res2 array. */
sweepv(SMU2, 0.0, 14.0, 13, 2.0E-2); /* Perform */
/*14 measurements */
/* over a range 0 V through 14 V. */
In this example, the
sweep X
command configures SMU2 to source a voltage that sweeps from 0 V through
+14 V in 14 steps. The results of the first
sweepv
command are stored in an array called
res1
. Because
of the
clrscn
command, the data and pointers associated with the first
sweepv
command are cleared.
Then 5 V is forced to the gate, and the measurement process is repeated. Results from these second
measurements are stored in an array called
res2
.
This example gets the measurement data needed to create a graph showing the gate voltage-to-drain
current characteristics of a field-effect transistor (FET). The program samples the current generated by
SMU2 14 times. This is done in two phases: First with 4 V applied to the gate, and then with 5 V applied.
The gate voltages are generated by SMU1.
Figure 1: S530/S540 gate voltage-to-drain current characteristics
Also see
sweepX (on page 3-88)