134
EPSON
E0C88832/88862 TECHNICAL MANUAL
7 ELECTRICAL CHARACTERISTICS
7.7 Oscillation Characteristics
Oscillation characteristics change depending on conditions (board pattern, components used, etc.). Use the
following characteristics as reference values. In particular, when a ceramic oscillator is used for OSC3, use
the oscillator manufacturer’s recommended values for constants such as capacitance and resistance. The
oscillation start time is important because it becomes the wait time when OSC3 clock is used. (If OSC3 is
used as CPU clock before oscillation stabilizes, the CPU may malfunction.)
■
OSC1 (Crystal)
■
OSC1 (CR)
■
OSC3 (Crystal)
■
OSC3 (Ceramic)
■
OSC3 (CR)
Item
Symbol
Min.
Typ.
Max.
Unit
Condition
Oscillation start time
External gate capacitance
Built-in gate capacitance
Built-in drain capacitance
Frequency/IC deviation
Frequency/power voltage deviation
Frequency adjustment range
t
sta
C
G1
C
G1
C
D1
∂
f/
∂
IC
∂
f/
∂
V
∂
f/
∂
C
G
5
-10
25
12
12
3
25
10
1
S
pF
pF
pF
ppm
ppm/V
ppm
Including board capacitance
In case of the chip
In case of the chip
V
DD
= constant
V
DD
= constant, C
G
= 5 to 25 pF
Note
1
2
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= 0 V, Ta = 25
°
C, Crystal oscillator = C2-TYPE*, C
G1
= 25 pF (external), C
D1
= Built-in
*
C2-TYPE Made by Seiko Epson corporation
Note) 1
2
When crystal oscillation is selected by the mask option.
When crystal oscillation (gate capacitor built-in) is selected by the mask option.
Min.
Typ.
Max.
t
sta
∂
f/
∂
IC
-25
100
25
µ
S
%
R
CR
= constant
Oscillation start time
Frequency/IC deviation
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85
°
C
Min.
Typ.
Max.
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
t
sta
t
sta
10
10
mS
mS
4.0 MHz crystal oscillator
8.0 MHz crystal oscillator
1
1
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: V
DD
= Within the operating voltage in each operating mode, V
SS
= 0 V, Ta = 25
°
C,
Crystal oscillator = CA-301 4MHz / CA-301 8MHz*, R
F
= 1 M
Ω
, C
G2
= C
D2
= 15 pF
Note) 1
The crystal oscillation start time changes by the crystal oscillator to be used, C
G2
and C
D2
.
*
CA-301 4MHz / CA-301 8MHz Made by Seiko Epson corporation
Min.
Typ.
Max.
t
sta
t
sta
∂
f/
∂
IC
∂
f/
∂
IC
-25
-25
100
100
25
25
µ
S
µ
S
%
%
R
CR
= constant
R
CR
= constant
Oscillation start time
(Normal mode)
Oscillation start time
(High speed mode)
Frequency/IC deviation
(Normal mode)
Frequency/IC deviation
(High speed mode)
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: V
DD
= Within the operating voltage in each operating mode, V
SS
= 0 V, Ta = -40 to 85
°
C
Min.
Typ.
Max.
t
sta
t
sta
1
1
mS
mS
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
4.0 MHz ceramic oscillator
8.0 MHz ceramic oscillator
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: V
DD
= Within the operating voltage in each operating mode, V
SS
= 0 V, Ta = 25
°
C,
Ceramic oscillator = CSA4.00MG / CSA8.00MTZ*, R
F
= 1 M
Ω
, C
G2
= C
D2
= 30 pF
*
CSA4.00MG / CSA8.00MTZ Made by Murata Mfg. corporation
Содержание 0C88832
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