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BIOS SETUP
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DRAM Clock
You can select “By SPD” and let BIOS detect the DRAM Clock automatically. You can
also set this field to “200MHz” or “266MHz”. The Default value is “By SPD”.
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DRAM Timing
This item allows you to configure the next five BIOS items manually. If you aren’t familiar
with these features, just leave this field as “By SPD”
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DRAM CAS Latency
This feature controls the DRAM performance. Default is “2.5” clocks. If your DRAM
DIMM specification is 2 CAS latency, change “2.5” to “2” for better performance.
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Bank Interleave
This function allows you to enhance the DRAM performance. Selections are: “Disabled”,
“2 Bank”, and “4 Bank”.
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Precharge to Active (Trp)
Precharge to Active (Trp) time is the number of clock cycles it takes for the DRAM to
finish its precharge. If insufficient time is selected, precharge may be incomplete and
data lost. Options are: “2T” and “3T”.
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Active to Precharge (Tras)
Active to Precharge (Tras) time is the number of clock cycles it takes for DRAM to open
(or make active) a row in a particular bank for the subsequent precharge command. If
insufficient time is selected, the subsequent precharge command might fail. Options
are: “5T” and “6T”.
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Active to CMD (Trcd)
Active to CMD (Command) (Trcd) time is the number of clock cycles it takes for the
DRAM to open a column in a particular row for the subsequent read or write command.
If insufficient time is selected, the subsequent command might fail. Options are: “2T”
and “3T”.
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DRAM Burst Length
The Burst Length determines the maximum number of column locations that can be
accessed for a given Read or Write command. Options are: “4” and “8”.
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DRAM Queue Depth
You can select the DRAM Queue Depth to enhance system performance. Options are:
“2 level”, “4 level” and “3 level”.
