Texas Instruments MSP430CG4616IPZ, Manual

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MSP430xG461x
MIXED SIGNAL MICROCONTROLLER
SLAS508I − APRIL 2006 − REVISED MARCH 2011
52
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
12-bit ADC, timing parameters
PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
f
ADC12CLK
For specified performance of
ADC12 linearity parameters
V
CC
= 2.2V/3 V 0.45 5 6.3 MHz
f
ADC12OSC
Internal ADC12
oscillator ADC12DIV=0,
f
ADC12CLK
=f
ADC12OSC
V
CC
= 2.2 V/ 3 V 3.7 5 6.3 MHz
t Conversion time
C
VREF+
≥
5
μ
F, Internal oscillator,
f
ADC12OSC
= 3.7 MHz to 6.3 MHz
V
CC
= 2.2 V/ 3 V 2.06 3.51
μ
s
t
CONVERT
Conversion time
External f
ADC12CLK
from ACLK, MCLK, or SMCLK,
ADC12SSEL
≠
0
13
×
ADC12DIV
×
1/f
ADC12CLK
μ
s
t
ADC12ON
Turn on settling time
of the ADC
(see Note 1) 100 ns
t Sampling time
R
S
= 400
Ω
, R
I
= 1000
Ω
,
C 30 pF
τ
[R + R ] x C
V
CC
= 3 V 1220
ns t
Sample
Sampling time
C
I
= 30 pF,
τ
= [R
S
+ R
I
] x C
I
,
(see Note 2)
V
CC
= 2.2 V 1400
ns
NOTES: 1. The condition is that the error in a conversion started after t
ADC12ON
is less than
±
0.5 LSB. The reference and input signal are already
settled.
2. Approximately ten Tau (
τ
) are needed to get an error of less than
±
0.5 LSB:
t
Sample
= ln(2
n+1
) x (R
S
+ R
I
) x C
I
+ 800 ns where n = ADC resolution = 12, R
S
= external source resistance.
12-bit ADC, linearity parameters
PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
E Integral linearity error
1.4 V
≤
(V
eREF+
− V
REF−
/V
eREF−
) min
≤
1.6 V
V
CC
=
±
2
LSB
E
I
Integral linearity error
1.6 V < (V
eREF+
− V
REF−
/V
eREF−
) min
≤
[V
AVCC
]
V
CC
=
2.2 V/3 V
±
1.7
LSB
E
D
Differential linearity
error (V
eREF+
− V
REF−
/V
eREF−
)
min
≤
(V
eREF+
− V
REF−
/V
eREF−
),
C
VREF+
= 10
μ
F (tantalum) and 100 nF (ceramic)
V
CC
=
2.2 V/3 V
±
1 LSB
E
O
Offset error
(V
eREF+
− V
REF−
/V
eREF−
)
min
≤
(V
eREF+
− V
REF−
/V
eREF−
),
Internal impedance of source R
S
< 100
Ω
,
C
VREF+
= 10
μ
F (tantalum) and 100 nF (ceramic)
V
CC
=
2.2 V/3 V
±
2
±
4 LSB
E
G
Gain error
(V
eREF+
− V
REF−
/V
eREF−
)
min
≤
(V
eREF+
− V
REF−
/V
eREF−
),
C
VREF+
= 10
μ
F (tantalum) and 100 nF (ceramic)
V
CC
=
2.2 V/3 V
±
1.1
±
2 LSB
E
T
Total unadjusted
error
(V
eREF+
− V
REF−
/V
eREF−
)
min
≤
(V
eREF+
− V
REF−
/V
eREF−
),
C
VREF+
= 10
μ
F (tantalum) and 100 nF (ceramic)
V
CC
=
2.2 V/3 V
±
2
±
5 LSB