Texas Instruments BQ25120F3A, Manual

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9.6.10 ILIM and Battery UVLO Control Register
Memory location 0x09h, Reset State: 0000 1011 (BQ25120F3A)
Figure 9-20. ILIM and Battery UVLO Control Register
7 (MSB) 6 5 4 3 2 1 0 (LSB)
0 0 0 0 1 0 1 1
Write R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-22. ILIM and Battery UVLO Control Register, Memory Location 1001
Bit Field Type Reset Description
B7 (MSB) RESET Write
only 0 Write:
1 – Reset all registers to default values
0 – No effect
Read: Always get 0
B6 R/W 0 N/A
B5 INLIM_2 R/W 0 Input Current Limit: 200 mA
B4 INLIM_1 R/W 0 Input Current Limit: 100 mA
B3 INLIM_0 R/W 1 Input Current Limit: 50 mA
B2 BUVLO_2 R/W 0 000, 001 – RESERVED
010 – BUVLO = 3.0 V
011 – BUVLO = 2.8 V
100 – BUVLO = 2.6 V
101 – BULVO = 2.4 V
110 – BUVLO = 2.2 V
111 – BUVLO = 2.2V
B1 BUVLO_1 R/W 1
B0 (LSB) BUVLO_0 R/W 1
INLIM Bits: Use INLIM bits to set the input current limit. The I
(INLIM)
is calculated using the following equation: I
(INLIM)
= 50 mA +
I
(INLIM)
CODE x 50 mA. The default may be overridden by the external resistor on ILIM.
9.6.11 Voltage Based Battery Monitor Register
Memory location 0x0Ah, Reset State: 0xxx xxxx (BQ25120F3A)
Figure 9-21. Voltage Based Battery Monitor Register
7 (MSB) 6 5 4 3 2 1 0 (LSB)
0 x x x x x x x
R/W R R R R R R R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-23. Voltage Based Battery Monitor Register, Memory Location 1010
Bit Field Type Reset Description
B7 (MSB) VBMON_READ R/W 0 Write 1 to initiate a new VBATREG reading. Read always 0.
B6 VBMON_RANGE_1 R x 11 – 90% to 100% of VBATREG
10 – 80% to 90% of VBATREG
01 – 70% to 80% of VBATREG
00 – 60% to 70% of VBATREG
B5 VBMON_RANGE_0 R x
B4 VBMON_TH_2 R x 111 – Above 8% of VBMON_RANGE
110 – Above 6% of VBMON_RANGE
011 – Above 4% of VBMON_RANGE
010 – Above 2% of VBMON_RANGE
001 – Above 0% of VBMON_RANGE
B3 VBMON_TH_1 R x
B2 VBMON_TH_0 R x
B1 R x N/A
B0 (LSB) R x N/A
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BQ25120F3A
SLUSDI4A – OCTOBER 2018 – REVISED APRIL 2021
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