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Bank Interleave
Not disable this item to increase SDRAM memory speed since separate
memory banks are set for odd and even addresses and the next byte of
memory can be accessed while the current byte is being refreshed.
Ø
The Choice: Disabled, 2 Bank, or 4 Bank.
Precharge to Active (Trp)
This item defines the numbers of cycles for RAS (row address strobe) to be
allowed to precharge.
Ø
The Choice: 2T or 3T.
Active to Precharge (Tras)
This item defines the timing delay for DRAM precharge.
Ø
The choice: 5T or 6T.
Active to CMD (Trcd)
This item defines the timing of the transition from RAS (row address strobe)
to CAS (column address strobe) as both rows and columns are separately
addressed shortly after DRAM is refreshed.
Ø
The Choice: 2T or 3T.
DRAM Burst Length
This item allows you to select the DRAM burst length.
Ø
The Choice: 4 or 8.
DRAM Queue Depth
This item allows you to select the DRAM queue depth.
Ø
The Choice: 2 level, 4 level, or 3 level.
DRAM Command Rate
This item allows you to select the DRAM executed rate.
Ø
The Choice: 2T Command or 1T Command.
AGP & P2P Bridge Control
Press <Enter> to enter the sub-menu of detailed options.
AGP Aperture Size
Select the size of AGP aperture. The aperture is a portion of the PCI
memory address range dedicated to graphics memory address space.
Ø
The Choice: 4M, 8M, 16M, 32M, 64M, 128M, or 256M.
AGP Mode
This item allows you to select the AGP Mode.
Ø
The Choice: 4X, 2X, or 1X.
AGP Driving Control
This item has the system automatically select its output buffer drive
strength, or makes it manually selectable by an end-user.
Ø
The Choice: Auto or Manual.
