NXP Semiconductors
UM11637
FRDMGD3160DCMHB evaluation board
4.3 Device features
Device
Description
Features
GD3160
The GD3160 is an
advanced single
channel gate driver for
insulated gate bipolar
transistor (IGBT) and
SiC.
•
Compatible with current sense and temp sense
IGBT/SiC modules
•
DESAT detection capability for detecting V
CE
desaturation condition
•
Fast short-circuit protection for IGBTs with current
sense feedback
•
Compliant with automotive safety integrity level
(ASIL) C/D ISO 26262 functional safety requirements
•
SPI interface for safety monitoring, programmability,
and flexibility
•
Integrated galvanic signal isolation
•
Integrated gate drive power stage capable of 10 A
peak source and sink
•
Interrupt pin for fast response to faults
•
Compatible with negative gate supply
•
Compatible with 200 V to 1700 V IGBTs,
power range > 125 kW
Table 1. Device features
4.4 Board description
The FRDMGD3160DCMHB is a half-bridge or three-phase evaluation board populated
with two GD3160 single channel IGBT or SiC gate drive devices. The board supports
connection to an FRDM-KL25Z microcontroller for SPI communication configuration
programming and monitoring. The board includes DESAT circuitry for short-circuit
detection and implementation of GD3160 shutdown protection capabilities.
The evaluation board is designed to connect to a single DCM
™
1000X module
(half-bridge configuration) or a full evaluation kit (three-phase configuration, with two
additional FRDMGD3160DCMHB boards) for evaluation of the GD3160 performance and
capabilities.
UM11637
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© NXP B.V. 2022. All rights reserved.
User guide
Rev. 2 — 3 February 2022
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