CHAPTER 20 ELECTRICAL SPECIFICATIONS
User’s Manual
U15075EJ2V1UD
332
Flash Memory Write/Erase Characteristics (T
A
= 10 to 40
°
C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
= 2.7 to 5.5 V
1.0
5
MHz
Operating frequency
f
X
V
DD
= 1.8 to 5.5 V
1.0
1.25
MHz
Write current
Note
(V
DD
pin)
I
DDW
When
V
PP
supply
voltage = V
PP1
During f
X
= 5.0 MHz
operation
7
mA
Write current
Note
(V
PP
pin)
I
PPW
When
V
PP
supply voltage = V
PP1
12
mA
Erase current
Note
(V
DD
pin)
I
DDE
When
V
PP
supply
voltage = V
PP1
During f
X
= 5.0 MHz
operation
7
mA
Erase current
Note
(V
PP
pin)
I
PPE
When
V
PP
supply voltage = V
PP1
100
mA
Unit erase time
t
er
0.5
1 1 s
Total erase time
t
era
20 s
Write count
Erase/write are regarded as 1 cycle
20
Times
V
PP0
In normal operation
0
0.2V
DD
V
V
PP
supply voltage
V
PP1
During flash memory programming
9.7
10.0
10.3
V
Note
The port current (including the current that flows to the on-chip pull-up resistors) is not included.