National Semiconductor MacPHYTER-II DP83816, Manual

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Absolute Maximum Ratings
Supply Voltage (V
DD
) -0.5 V to 3.6 V
DC Input Voltage (V
IN
) -0.5 V to 5.5 V
DC Output Voltage (V
OUT
) -0.5 V to V
DD
+ 0.5 V
Storage Temperature Range (T
STG
) -65 °C to 150 °C
Power Dissipation (P
D
) 504 mW
Lead Temp. (T
L
) (Soldering, 10 sec) 260 °C
ESD Rating
(R
ZAP
= 1.5k
Ω
, C
ZAP
= 120 pF)
ESD for TPTD + pins only
2.0 KV
1.0 KV
θ
ja
(@0 cfm, 0.5 Watt) 46.4 °C/W
θ
jc
(@1 Watt) 9.29 °C/W
Recommended Operating Conditions
Note: Absolute maximum ratings are values beyond which
operation is not recommended or guaranteed. Extended
exposure beyond these limits may affect device reliability.
They are not meant to imply that the device should be
operated at these limits.
Supply voltage (V
DD
) 3.3 Volts + 0.3V
Normal Operating Temperature (T
A
)
0 to 70 °C
DP83816
7.0 DC and AC Specifications
7.1 DC Specifications
T
A
= 0oC to 70oC, V
DD
= 3.3 V ±0.3V, unless otherwise specified
Note 1: These values ensure 3.3V and 5V compatibility.
Note 2: For I
DD
Measurements, outputs are not loaded.
Symbol Parameter Conditions Min Typ Max Units
V
OH
Minimum High Level Output Voltage I
OH
= -6 mA
(Note 1)
V
DD
- 0.5 V
V
OL
Maximum Low Level Output Voltage I
OL
= 6 mA
(Note 1)
0.4 V
V
IH
Minimum High Level Input Voltage
(Note 1)
2.0 V
V
IL
Maximum Low Level Input Voltage
(Note 1)
0.8 V
I
IN
Input Current V
IN
= V
DD
or GND -10 10
µ
A
I
OZ
TRI-STATE Output Leakage Current V
OUT
= V
DD
or GND -10 10
µ
A
I
DD
Operating Supply Current I
OUT
= 0 mA
(Note 2)
116 140 mA
WOL Standby 90 105 mA
Sleep Mode 16 20 mA
R
INdiff
Differential Input Resistance RD
+/−
5 6 k
Ω
V
TPTD_100
100 Mb/s Transmit Voltage TD
+/−
0.95 1 1.05 V
V
TPTDsym
100 Mb/s Transmit Voltage
Symmetry
TD
+/− ±
2 %
V
TPTD_10
10 Mb/s Transmit Voltage TD
+/−
2.2 2.5 2.8 V
C
IN
CMOS Input Capacitance 8 pF
C
OUT
CMOS Output Capacitance 8 pF
SD
THon
100BASE-TX Signal detect turn-on
threshold
RD
+/−
1000 mV diff
pk-pk
SD
THoff
100BASE-TX Signal detect turn-off
threshold
RD
+/−
200 mV diff
pk-pk
V
TH1
10BASE-T Receive Threshold RD
+/−
300 585 mV