Table 1: Performance
Notes apply to entire table
Device
and
Capacity
Sequential
128KB Transfer
Random
4KB Transfer
Random
4KB Transfer (70/30)
Average
Latency (µs)
Read
(MB/s)
Write
(MB/s)
Read
(KIOPS)
Write
(KIOPS)
Mixed Read/Write
(KIOPS)
S655DC
200GB
1550
600
200
120
85
115
400GB
1700
850
200
120
115
115
S650DC
400GB
1550
625
180
67
80
115
800GB
1850
850
200
80
105
115
1600GB
1900
850
200
80
120
115
3200GB
1900
800
200
80
120
115
S630DC
400GB
1400
490
180
20
45
115
480GB
1550
615
180
30
45
115
800GB
1400
710
180
20
45
115
960GB
1700
850
180
30
65
115
1600GB
1600
850
180
20
45
115
1920GB
1850
850
180
30
65
115
3200GB
1600
850
180
20
45
115
3840GB
1850
770
180
30
65
115
S610DC
1920GB
1700
850
190
12
45
115
3840GB
1600
770
190
15
45
115
Notes: 1. Typical I/O performance numbers: measured using an iometer in a steady state region with a queue depth of
32 for sequential and random transfers and write cache enabled; a queue depth of 1 for READ/WRITE laten-
cy values.
2. Consistent host system interface, configurations, and variables: maintained with variation only in the drive
being tested.
3. Response time measurement conditions: recorded with nominal power at 25 °C ambient temperature.
4. Page-to-page response times: derived from all possible page-to-page accesses on a sequentially precondi-
tioned drive.
5. Average response time: derived from at least 5000 access measurements between programmable pages on a
randomly preconditioned drive to ensure a true statistical random average.
S600DC Series 2.5-Inch SAS NAND Flash SSD
Features
CCMTD-1725822587-3891
s600dc_series_2_5_sas_ssd.pdf - Rev. H 9/17 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
