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Application Note

31 of 53

V 1.0

2019-04-01

IM393 Application note

IM393 IPM Technical Description

Function and protection circuit

4 ~ 11.2

As the undervoltage lockout function is activated, control input signals are

blocked, and a fault signal VFO is generated.

11.2 ~ 13.5

IGBTs will be operated in accordance with the control gate input. Driving

voltage is below the recommended range, so V

CE(sat)

and the switching losses

will be larger than under normal conditions. High-side IGBTs cannot operate

after V

initial charging, as V

cannot reach V

BSUV+

13.5 ~ 16.5 for VDD

12.5 ~ 17.5 for VBS

Normal operation. This is the recommended operating condition.

of 15 V is recommended when only integrated bootstrap circuitry is used.

16.5 ~ 20 for VDD

17.5 ~ 20 for VBS

IGBTs are still in operation. Because driving voltage is above the

recommended range, IGBTs’ switching is faster. It causes increased system

noise. And peak short-circuit current might be too large for proper operation

of the short-circuit protection.

Over 20

Control circuit in the IM393-XX might be damaged.

5.4

Over-temperature protection

IM393-XX have V

pins for temperature-sensing. Figure 23 shows internal thermistor-resistance characteristics

according to the thermistor temperature. For over-temperature protection, a circuitry is introduced in this

section. As shown in Figure 24, the V

pin is connected directly to the ADC terminal of the microcontroller. This

circuit is very simple, and the six IGBTs have to be shut down by a command issued from the microcontroller.

Figure 23

Internal thermistor-resistance characteristics according to thermistor temperature

NTC resistance can be translated to a voltage that can be read by the microcontroller using external resistance
R1. For example, when R1 is 2 k

Ω

, then VFO at about 100°C of the thermistor temperature is 2.95 V

typ

at V

ctr

= 5 V

and 1.95 V at V

ctr

= 3.3 V, as shown in Figure 25.

Summary of Contents for IM393 Series

Page 1: ...1 1 Product line up 4 1 2 Nomenclature 5 2 Internal components and package technology 6 2 1 Power transistor and diode technology 6 2 2 Control IC Six channel gate driver IC 6 2 3 Thermistor 7 2 4 Package technology 8 3 Product overview and pin description 9 3 1 Internal circuit and features 9 3 2 Maximum electrical rating 10 3 3 Description of the input and output pins 10 3 4 Outline drawings 15 ...

Page 2: ...witching losses 39 7 3 Thermal impedance 39 7 4 Temperature rise considerations and calculation example 40 7 5 Heat sink selection guide 42 7 5 1 Required heat sink performance 42 7 5 2 Heat sink characteristics 43 7 5 2 1 Heat transfer from heat source to heat sink 43 7 5 2 2 Heat transfer within the heat sink 43 7 5 2 3 Heat transfer from heat sink surface to ambient 43 7 5 3 Selecting a heat si...

Page 3: ...mily of highly integrated intelligent power modules that contain nearly all of the semiconductor components required to drive electronically controlled variable speed electric motors This advanced IPM is a combination of Infineon s newest low VCE ON trench IGBT technology optimized for the best trade off between conduction and switching losses and the industry benchmark three phase high voltage hi...

Page 4: ...uit Package Isolation voltage VRMS Main applications Current A Voltage V IM393 S6E F 6 A 600 V 3 ф Bridge Open emitter E Fully molded DIP Module F Fully molded SIP Module 2000 VRMS sinusoidal 1min Refrigerator Dryer Dish washer Fan Pump GPI IM393 M6E F 10 A Washing machine Dryer Elevator door IM393 L6E F 15 A Washing machine Air conditioner Elevator door IM393 X6E F 20 A Air conditioner ...

Page 5: ...Application Note 5 of 53 V 1 0 2019 04 01 IM393 Application note IM393 IPM Technical Description Introduction 1 2 Nomenclature ...

Page 6: ...ode functionality has been integrated into this device to reduce the component count on the PCB Proprietary HVIC and latch up immune CMOS technologies have been implemented in a rugged monolithic structure The floating logic input is compatible with standard CMOS and LSTTL output down to 3 3 V logic A current trip function which terminates all six outputs can be done by an external current sense r...

Page 7: ...961 9 3033 9 9279 6 7 15 317 53 340 93 365 14 7 1 70 7 2454 7 7652 8 3016 6 9 10 241 62 258 72 276 33 6 8 75 6 0619 6 5084 6 9703 7 1 5 185 51 198 10 211 02 6 5 80 5 0922 5 4767 5 8755 7 3 0 143 62 152 98 162 53 6 2 85 4 3017 4 6342 4 9800 7 5 5 112 35 119 37 126 51 6 0 90 3 6482 3 9366 4 2372 7 6 10 88 440 93 740 99 109 5 7 95 3 1056 3 3565 3 6186 7 8 15 70 033 74 055 78 112 5 5 100 2 6533 2 8721...

Page 8: ...be visible in the NTC readings after a certain time which depends significantly on the application conditions 2 4 Package technology IM393 XX offers the smallest size while providing high power density up to 600 V and 20 A by employing TRENCHSTOP IGBT and emitter controlled diodes with a six channel gate drive IC It contains all power components such as IGBTs and isolates them from each other and ...

Page 9: ...N W 21 LIN U 22 LIN V 23 LIN W 7 VB V 10 VB U 17 RFE 18 HIN U 19 HIN V 3 VS W 6 VS V 9 VS U 1 P 12 VDD 13 VTH 14 COM 15 COM 16 ITRIP LIN3 24 N W 26 N U 25 N V VSS t a Dual in line package b Single in line package Figure 4 Internal circuit Features 600 V 6 A to 20 A rating in one physical package size mechanical layouts are identical Motor power range from 100 W to 1 5 kW Fully isolated dual in lin...

Page 10: ...idering temperature ripple on the power chips the maximum junction temperature rating of IM393 XX is 150 C Operating case temperature range TC 40 125 C Tc case temperature is defined as a temperature of the package surface underneath the specified power chip Please mount a temperature sensor on a heat sink surface at the defined position in Figure 5 so as to get accurate temperature information Fi...

Page 11: ...rent protection input 17 RFE RCIN Fault Enable 18 HIN U U phase high side gate driver input 19 HIN V V phase high side gate driver input 20 HIN W W phase high side gate driver input 21 LIN U U phase low side gate driver input 22 LIN V V phase low side gate driver input 23 LIN W W phase low side gate driver input 24 N W W phase low side emitter 25 N V V phase low side emitter 26 N U U phase low sid...

Page 12: ...e high side floating supply voltage 8 N A None 9 VS U U U phase high side floating supply offset voltage U phase output 10 VB U U phase high side floating supply voltage 11 N A None 12 VDD Low side control supply 13 VTH Temperature monitor 14 COM Low side control negative supply 15 COM Low side control negative supply 16 ITRIP Over current protection input 17 RFE RCIN Fault Enable 18 HIN U U phase...

Page 13: ...rol ground for the internal IC Signal Input pins Pins HIN U HIN V HIN W LIN U LIN V LIN W These are pins to control the operation of the internal IGBTs They are activated by voltage input signals The terminals are internally connected to a Schmitt trigger circuit composed of 5 V class CMOS The signal logic of these pins is active high The IGBT associated with each of these pins will be turned ON w...

Page 14: ... and the length of the fault clear time period is determined by the external capacitor value see section 5 2 Temperature monitoring output pin Pin VTH The VTH pin provides a voltage linked to NTC temperature see section 5 4 Positive DC link pin Pin P This is the DC link positive power supply pin of the IM393 XX IPM It is internally connected to the collectors of the high side IGBTs In order to sup...

Page 15: ...ion Note 15 of 53 V 1 0 2019 04 01 IM393 Application note IM393 IPM Technical Description Product overview and pin description 3 4 Outline drawings Figure 6 DIP version IM393 X6E Figure 7 DIP version IM393 X6E2 ...

Page 16: ...Application Note 16 of 53 V 1 0 2019 04 01 IM393 Application note IM393 IPM Technical Description Product overview and pin description Figure 8 DIP version IM393 X6E3 Figure 9 SIP version IM393 X6F ...

Page 17: ...ON When the over current condition is over the MOSFET will then turn OFF however all the IGBTs will remain OFF until the fault is cleared see section 5 3 Micro Controller COM 5V Line or 3 3V Line HIN LIN RFE 1kΩ 1nF CIPOSTM Tiny 1 2MΩ 1nF 100Ω 1nF Figure 10 Recommended microcontroller I O interface circuit Table 4 Maximum rating of input and RFE pin Item Symbol Condition Rating Unit Module supply ...

Page 18: ...nput Schmitt trigger noise filter deadtime and shoot through prevention functions provide beneficial noise rejection to short input pulses Furthermore by lowering the turn ON and turn OFF threshold voltage of the input signal as shown in Table 4 2 a direct connection to 3 3 V class microcontroller or DSP is possible Table 5 Input threshold voltage at VDD 15 V and TJ 25 C Item Symbol Condition Min ...

Page 19: ... 32 P 33 4 VB W 20 HIN W 21 LIN U 22 LIN V 23 LIN W 7 VB V 10 VB U 17 RFE 18 HIN U 19 HIN V 3 VS W 6 VS V 9 VS U N W 29 1 P 12 VDD 13 VTH 14 COM 15 COM 16 ITRIP LIN3 24 N W 26 N U 25 N V P 35 VSS t 5 or 3 3V 5 or 3 3V 8 9 10 Figure 12 Example of application circuit DIP package 15V Micro Controller 1 2 3 4 7 Power GND COM VDD LIN2 LIN1 HIN3 ITRIP LO1 LO2 LO3 HO3 HO2 HO1 VB3 VS3 VB2 VS2 VB1 VS1 HIN2...

Page 20: ...al ground should be minimized The patterns should be connected at the common end of the shunt resistors only for the same potential 8 COM pattern In the case of a DIP package pins 24 25 and 26 must be left unconnected as COM is connected to pin 29 28 and 27 by the shunt resistor It is highly advisable to connect both pins 14 and 15 together 9 RFE circuit To set up R and C parameters for fault clea...

Page 21: ...P and SCP functions 4 5 Recommended wiring of shunt resistor and snubber capacitor External current sensing resistors are applied to detect over current of phase currents A long wiring pattern between the shunt resistors and IM393 XX will cause excessive surges that might damage the IPM internal IC and current detection components This may also distort the sensing signals that may lead to loss of ...

Page 22: ...y noise Make sure there is a good distance between switching lines with high di dt and dV dt and the signal lines as they are very sensitive to electrical noise Specifically the trace of each phase OUT carrying significant fast current and voltage transitionshould be separated from the logic lines and analogsensingcircuit RSHUNT ITRIP RFE Place shunt resistors as close as possible to the low side ...

Page 23: ...nterface circuit and layout guide 4 6 Pin and screw hole coordinates for IM393 XX footprint Figure 16 shows IM393 XX position on the PCB to indicate center coordinates of each pin and screw hole in Table 8 and Table 9 a Dual in line package b Single in line package Figure 16 IM393 XX positions on PCB ...

Page 24: ...19 00 11 N A N A 30 21 59 19 00 12 13 97 3 00 31 17 78 19 00 13 15 24 0 00 32 13 97 19 00 14 16 51 3 00 33 10 16 19 00 15 17 78 0 00 34 N A N A 16 19 05 3 00 35 2 54 19 00 17 20 32 0 00 36 N A N A 18 21 59 3 00 Screw hole 1 31 87 9 50 19 22 86 0 00 2 0 13 9 50 Table 9 Pin and screw hole coordinates for SIP package Unit mm Pin Number X Y Pin Number X Y Signal pin 1 0 00 0 00 Signal pin 14 16 51 3 0...

Page 25: ... 50 TITRIP 50 RFE 50 TFLT Figure 17 Timing chart of over current protection function The threshold of over current protection can be determined by VITRIP RSHUNT if a single bus shunt is used and is directly connected to ITRIP pin The following table shows the delay time of fault reporting and ITRIP shutdown Table 10 Dynamic electrical characteristics Symbol Description Min Typ Max Unit conditions ...

Page 26: ...sistor is calculated as 0 49 22 5 0 022 Ω For the power rating of the shunt resistor the following list should be considered Maximum load current of inverter IRMS Shunt resistor value at Tc 25 C RSH Power derating ratio of shunt resistor at TSH 100 C according to the manufacturer s datasheet Safety margin The shunt resistor power rating is calculated by the following equation ratio derating margin...

Page 27: ... Item Min Typ Max Unit ITRIP positive going threshold VIT TH 0 44 0 49 0 54 V Table 14 Internal delay time of OC protection circuit Item Condition Min Typ Max Unit Shut down propagation delay TITRIP IM393 X6E F Iout 10 A from VIT TH to 10 Iout 1 5 μs IM393 L6E F Iout 7 5 A from VIT TH to 10 Iout 1 5 μs IM393 M6E F Iout 5 A from VIT TH to 10 Iout 1 5 μs IM393 S6E F Iout 3 A from VIT TH to 10 Iout 1...

Page 28: ...ion 3 3V RRCIN CRCIN RFE To Microcontroller ITRIP COM LIN X HIN X Figure 18 Internal block diagram of IM393 XX ITRIP LIN U V W HIN U V W TFLT CLR 50 50 U V W 50 TITRIP 50 RFE 50 TFLT Figure 19 Input output timing chart during short circuit event The TFLT CLR can be determined by the below formula In the case of 3 3 V VRFE t 3 3 V 1 e t RC 4 TFLT CLR RRCIN CRCIN ln 1 VIN_TH 3 3 V 5 For example if R...

Page 29: ...n the fault duration to guarantee a shutdown of the system and the over current condition must be cleared before resuming operation 5 3 Undervoltage lockout UVLO IM393 XX HVIC provides undervoltage lockout protection on both the VDD logic and low side circuitry power supply and the VBS high side circuitry power supply Figure 20 is used to illustrate this concept VDD or VBS is plotted over time and...

Page 30: ...rol Supply Voltage HINx LINx HOx LOx Figure 21 Timing chart of low side undervoltage protection function VBSUV VBSUV Fault Output Signal Control Supply Voltage HINx LINx HOx LOx High level no fault output Figure 22 Timing chart of high side undervoltage protection function Table 15 IM393 XX functions versus control power supply voltage Control voltage range V IM393 XX function operations 0 4 Contr...

Page 31: ...witching is faster It causes increased system noise And peak short circuit current might be too large for proper operation of the short circuit protection Over 20 Control circuit in the IM393 XX might be damaged 5 4 Over temperature protection IM393 XX have VTH pins for temperature sensing Figure 23 shows internal thermistor resistance characteristics according to the thermistor temperature For ov...

Page 32: ...Tiny R1 COM VTH Thermistor Figure 24 Circuit proposals for over temperature protection Figure 25 Voltage of VTH pin according to thermistor temperature 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 0 10 20 30 40 50 60 70 80 90 100 110 120 V TH V Thermistor temperature Vctr 5 V Vctr 3 3 V OT set 100 2 95 V at Vctr 5 V OT set 100 1 95 V at Vctr 3 3 V ...

Page 33: ...BS The VBS voltage will be charged each cycle depending on the time of LO and the value of the CBS capacitor the collector emitter drop of external IGBT and the low side freewheeling diode drop The bootstrap MOSFET of each channel follows the state of respective low side output stage unless the VB voltage is higher than approximately 110 of VDD In that case the bootstrap MOSFET is designed to rema...

Page 34: ...sistor The initial charging time tcharge can be calculated with the following equation V V V V V ln δ 1 R C t LS FD BS min DD DD BS BS charge 12 VFD Forward voltage drop across the bootstrap diode VBS min The minimum value of the bootstrap capacitor voltage VLS Voltage drop across the low side IGBT δ Duty ratio of PWM 15V line U VSS VDD LIN LO HO VB VS N U V W P LIN COM VDD VB VS LIN CIPOSTM Tiny ...

Page 35: ...he low side IGBT or off time of the high side IGBT The bootstrap capacitor should always be placed as close to the IM393 XX pins as possible At least one low ESR capacitor should be used to provide good local de coupling For example a separate ceramic capacitor close to IM393 XX is essential if an electrolytic capacitor is used for the bootstrap capacitor If the bootstrap capacitor is either a cer...

Page 36: ...ge ripple is 0 1 V the recommended bootstrap capacitance is therefore in the range of 4 7 µF for most switching frequencies In case of other PWM method like a discontinuous sinusoidal modulation the tcharge must be set to the longest period of the low side IGBT off state Note that this result is only an example It is recommended that the system design considers the actual control pattern and lifet...

Page 37: ...ires the following data The maximum power losses Psw i of each power switch The maximum junction temperature TJ max of the power semiconductors The junction to ambient thermal impedance Zth J A For steady state conditions static thermal resistance Rth J A is sufficient This thermal resistance comprises the junction to case thermal resistance Rth J C as provided in datasheets the case to heat sink ...

Page 38: ...WMs are adopted For other cases like three phase discontinuous PWMs please refer to 4 7 2 1 Conduction losses The typical characteristics of forward drop voltage are approximated by the following linear equation for the IGBT and the diode respectively i R V V i R V V D D DIODE I I IGBT 14 VI Threshold voltage of IGBT VD Threshold voltage of monolithic body diode RI On state slope resistance of IGB...

Page 39: ...the switching loss occurs every PWM period for the continuous PWM schemes Therefore depending on the switching frequency fSW the switching loss of one device is 1 2 23 7 3 Thermal impedance During operation power losses generate heat which elevates the temperature in the semiconductor junctions This limits the performance and the lifetime of the device As junction temperature increases the operati...

Page 40: ...re The result of loss calculation using the typical characteristics is shown in Figure 33 as max RMS output current versus carrier frequency These curves functions of the motor drive topology and control scheme are simulated under the following conditions PWM Vbus Vout pf fmod Tcase Sine 320 V 155 V 0 6 60 Hz 100 C Figure 33 shows an example of an inverter operated at TC 100 C It indicates the max...

Page 41: ...le as the device current changes within half modulation cycle as illustrated in Figure 34 The upper portion is the high side IGBT current which is used to calculate EON EOFF of IGBT The lower portion in Figure 34 is the low side diode current for ERR Figure 34 Loss calculation of sinusoidal modulation Because the loss is not constant over time its shape depends on current waveforms and device para...

Page 42: ... the required thermal resistance from case to ambient sw max A JC th sw max J A HS th HS C th A C th P T R P T R R R 25 For example the power switches of a washing machine drive dissipate 3 5 W maximum each the maximum ambient temperature is 50 C the maximum junction temperature is 150 C and Rth jC is 3 K W It results in 150 3 5 3 50 6 3 5 W 4 3 If the heat sink temperature shall be limited to 100...

Page 43: ... provide a good contact between the two surfaces and will lead to higher thermal resistance as well Mounting pressure The higher the mounting pressure the better the interface material disperses Excess interface material will be squeezed out resulting in a thinner interface layer with lower thermal resistance 7 5 2 2 Heat transfer within the heat sink The heat transfer within the heat sink is main...

Page 44: ...ugh the space between the fins Figure 36 Thermal resistance as a function of the air flow velocity Furthermore in the case of natural convection the heat sink efficiency depends on the temperature difference of heat sink and ambient i e on the dissipated power Some manufacturers like Aavid thermalloy provide a correction table which allows users to calculate thermal resistance depending on the tem...

Page 45: ...heat sink one can start with estimated volumetric thermal resistances as given in Table 17 Taken from 7 This table provides only first evidence as the actual resistance may vary depending on many parameters such as actual dimensions type and orientation Table 17 Electrical characteristics of internal bootstrap parameters Flow conditions m s Volumetric resistance cm C W Natural convection 500 800 1...

Page 46: ...n Note 46 of 53 V 1 0 2019 04 01 IM393 Application note IM393 IPM Technical Description Thermal design Figure 38 Motor drive with fixed case temperature Figure 39 Motor drive with fixed heat sink characteristics ...

Page 47: ...at dissipation effect due to warping of the substrate tighten down the mounting screws gradually and sequentially while maintaining a left right balance in pressure applied The design of the application PCB must ensure that the plane of the back side of the module and the plane of the heat sink are parallel in order to achieve minimal tension of the package and an optimal contact of the module wit...

Page 48: ...t sink The tightening of the screws is the main process of attaching the module to the heat sink It is recommended that M3 screws are used in conjunction with a spring washer and a plain washer The spring washer must be assembled between the plain washer and the screw head The screw torque must be monitored by the fixing tool Tightening process Align module with the fixing holes Insert screw A wit...

Page 49: ...esistance Apply thermal conductive grease properly over the contact surface between the module and the heat sink which is also useful for preventing the contact surface from corrosion Furthermore the grease should be of robust quality and long term endurance within a wide operating temperature range Use a torque wrench to tighten to the specified torque rating Exceeding the maximum torque limitati...

Page 50: ...or direct sunlight Especially be careful during periods of rain or snow Use storage areas where there is minimal temperature fluctuation Rapid temperature change can cause moisture condensation on the stored IM393 XX IPM This can result in lead oxidation or corrosion leading to downgraded solderability Do not allow the IM393 XX IPM to be exposed to corrosive gasses or dusty conditions Do not allow...

Page 51: ...k J Oehmen A Arens D Chung J Lee A new intelligent power module for home appliances Proceedings of PCIM 2009 Nuremberg Germany 4 D Chung S Sul Minimum Loss Strategy for three Phase PWM Rectifier IEEE Transactions on Industrial Electronics Vol 46 No 3 June 1999 5 PLECS simulation tool https plex infineon com plexim ipmmotor html 6 Aavid Thermalloy http www aavidthermalloy com technical correct shtm...

Page 52: ...tion Note 52 of 53 V 1 0 2019 04 01 IM393 Application note IM393 IPM Technical Description Revision history Revision history Document version Date of release Description of changes 1 0 2019 04 01 First release ...

Page 53: ...all information given in this application note The data contained in this document is exclusively intended for technically trained staff It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application For further information on...

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