Application Note
Please read the Important Notice and Warnings at the end of this document
V 1.1
www.infineon.com/eval-1edf-g1b-hb-gan
page 1 of 23
2020-11-09
AN_1811_PL52_1811_234307
CoolGaN™ 600 V half-bridge evaluation
platform featuring GaN EiceDRIVER™
About this document
Authors: Eric Persson, Yalcin Haksoz
Ordering code: EVAL_1EDF_G1B_HB_GAN
Scope and purpose
This application note explains how to setup and use the CoolGaN™ 600 V half-bridge evaluation board. The
board features a half-bridge of 70 mΩ GaN power transistors, a pair of EiceDRIVER™ GaN gate drivers, and
isolated power supplies for the gate drivers along with input logic that provides adjustable deadtime. Using an
external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous
PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range.
Intended audience
This document is intended for power electronic engineers and designers who are already familiar with MOSFET
or IGBT-based converters, inverters and gate drivers, who are interested in looking at the similarities and
differences of GaN power transistors compared to their silicon counterparts.
Figure 1
Front and back view of the CoolGaN™ half-bridge evaluation platform