Fuji Electric 6MBP15XSD060-50 Applications Manual Download Page 15

         Fuji Electric Co., Ltd. 

2-4 

MT6M12343 Rev.1.0 
Dec.-2016 

Chapter 2 

Description of Terminal Symbols and Terminology 

Item 

Symbol 

Description 

Input current 

I

IN 

Current flowing between signal input IN(HU,HV,HW,LU,LV,LW) and COM. 

Input pull-down resistance 

R

IN 

Input resistance of resistor in input terminals IN(HU,HV,HW,LU,LV,LW). 
They are inserted between each input terminal and COM. 

Fault output voltage 

V

FO(H) 

Output voltage level of VFO terminal under the normal operation (The lower side arm 
protection function is not actuated.) with pull-up resistor 10k

W. 

V

FO(L) 

Output voltage level of VFO terminal after the lower side arm protection function is 
actuated. 

Fault output pulse width 

t

FO 

Period in which an fault status continues to be output (

V

FO

) from the VFO terminal 

after the lower side arm protection function is actuated. Refer chapter 3 section 6. 

Over current protection 
voltage level 

V

IS(ref) 

Threshold voltage of IS terminal at the over current protection. 
Refer chapter 3 section 5. 

Over Current Protection 
Trip delay time 

t

d(IS) 

The time from the Over current protection triggered until the collector current 
becomes 50% of the rating. Refer chapter 3 section 5. 

Output Voltage of 
temperature sensor 

V

(temp) 

The output voltage of  temp.  It is applied to the temperature sensor output model. 
Refer chapter 3 section 7. 

Overheating protection 
temperature 

T

OH 

Tripping temperature of over heating. The temperature is observed by LVIC. 
All low side IGBTs are shut down when the LVIC temperature exceeds overheating 
threshold. See Fig.2-2 and refer chapter 3 section 8. 

Overheating protection 
hysteresis 

T

OH(hys) 

Hysteresis temperature required for output stop resetting after protection operation. 
See Fig.2-2 and refer chapter 3 section 8.

 

 

T

OH

 and 

T

OH(hys)

 are applied to the overheating protection model. 

Vcc Under voltage trip level of 
Low-side 

V

CCL(OFF) 

Tripping voltage of the Low-side control IC power supply.  
All low side IGBTs are shut down when the voltage of V

CCL

 drops below this threshold. 

Refer chapter 3 section 1. 

Vcc Under voltage reset level 
of Low-side 

V

CCL(ON) 

Resetting threshold voltage from under voltage trip status of 

V

CCL.

  

Refer chapter 3 section 1. 

Vcc Under voltage hysteresis 
of Low-side 

V

CCL(hys) 

Hysteresis voltage between 

V

CCL(OFF)

 and 

V

CCL(ON)

.  

Vcc Under voltage trip level of 
High-side 

V

CCH(OFF) 

Tripping voltage of High-side control IC power supply.  
The IGBTs of high-side are shut down when the voltage of 

V

CCH

 drops below this 

threshold. Refer chapter 3 section 1. 

Vcc Under voltage reset level 
of High-side 

V

CCH(ON) 

Resetting threshold voltage from under voltage trip status of 

V

CCH.

 See Fig.3-3 

Resetting voltage at which the IGBT performs shut down when the High-side control 
power supply voltage 

V

CCH

 drops. Refer chapter 3 section 1. 

Vcc Under voltage hysteresis 
of High-side 

V

CCH(hys) 

Hysteresis voltage between V

CCH(OFF)

 and V

CCH(ON)

.  

VB Under voltage trip level 

V

B(OFF) 

Tripping voltage in under voltage of VB(*). The IGBTs of high-side are shut down 
when the voltage of VB(*) drops below this threshold. Refer chapter 3 section 2. 

VB Under voltage reset level 

V

B(ON) 

Resetting voltage at which the IGBT performs shut down when the upper side arm 
IGBT bias voltage VB(*) drops. Refer chapter 3 section 2. 

VB Under voltage hysteresis 

V

B(hys) 

Hysteresis voltage between V

B(OFF)

 and V

B(ON)

.  

(2) Control circuit block (Continued) 

Table 2-2 Description of Terminology 

Summary of Contents for 6MBP15XSD060-50

Page 1: ...i Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Fuji Electric Co Ltd Dec 2016 Application Manual Small IPM Fuji IGBT Intelligent Power Module 6MBP15XS 060 50 6MBP20XS 060 50 6MBP30XS 060 50 6MBP35XS 060...

Page 2: ...al BSDs Boot Strap Diodes 3 9 4 Input Terminals IN HU HV HW IN LU LV LW 3 13 5 Over Current Protection Input IS 3 16 6 Fault Status Output VFO 3 17 7 Linear Temperature Sensor Output TEMP 3 18 8 Over...

Page 3: ...T6M12343 Rev 1 0 Dec 2016 1 1 Contents Page 1 Introduction 1 2 2 Product line up 1 4 3 Definition of type name and marking spec 1 5 4 Package outline dimensions 1 6 5 Absolute maximum ratings 1 7 Chap...

Page 4: ...and switching loss 1 2 Built in drive circuit Drives the IGBT under optimal conditions The control IC of upper side arms have a built in high voltage level shift circuit HVIC This IPM is possible for...

Page 5: ...s the IPM from overheating The OH protection circuit is built into the control IC of the lower side arm LVIC The temperature sensor output function enables to output measured temperature as an analog...

Page 6: ...500Vrms Sinusoidal 60Hz 1min Between shorted all terminals and case LT 1 Room air conditioner compressor drive Heat pump applications Fan motor drive General motor drive Servo drive 6MBP15XSF060 50 LT...

Page 7: ...fication Type name 6 MBP 20 X S D 060 50 Additional model number Option 50 RoHS Voltage rating 060 600V Additional number of series D Temperature sensor output F Temperature sensor output and Over hea...

Page 8: ...2 0 1 14 0 14 7 29 4 0 5 0 5 0 5 1 8 1 5 3 7 0 1 0 1 0 40 10 6 0 1 1 8 0 1 2 5 min 1 2 0 6 8 96 15 56 3 5 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 30 32 36 0 1 0 98 min Note 1 The IMS I...

Page 9: ...Collector Current ICP 25 40 A Maximum pulse collector current for the IGBT chip Tc 25 C Tj 150 C Diode Forward Current IF 25 20 A Maximum forward current for the FWD chip Tc 25 C Tj 150 C Peak Diode F...

Page 10: ...rrent IIN 3 mA Maximum input current that flows from IN terminal to COM Fault Signal Voltage VFO 0 5 VCCL 0 5 V Voltage that can be applied between COM and VFO terminal Fault Signal Current IFO 1 mA S...

Page 11: ...the absolute maximum rating of IGBT Collector Emitter voltage And VDC Surge is specified considering the margin of the surge voltage which is generated by the wiring inductance in this IPM Furthermor...

Page 12: ...Fuji Electric Co Ltd 2 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Description of Terminal Symbols 2 2 2 Description of Terminology 2 3 Chapter 2 Description of Terminal Symbols and Terminology...

Page 13: ...phase 12 VCCH High side control supply 13 COM Common supply ground 14 IN LU Signal input for low side U phase 15 IN LV Signal input for low side V phase 16 IN LW Signal input for low side W phase 17...

Page 14: ...delay td off The time from the input signal dropping below the threshold value until the collector current decreases to 90 See Fig 2 1 Turn on fall time tf The time from the collector current becoming...

Page 15: ...n hysteresis TOH hys Hysteresis temperature required for output stop resetting after protection operation See Fig 2 2 and refer chapter 3 section 8 TOH and TOH hys are applied to the overheating prote...

Page 16: ...istance between the case and heat sink when mounted on a heat sink at the recommended torque using the thermal compound 3 BSD block 5 Mechanical Characteristics Item Symbol Description Tighten torque...

Page 17: ...rminology Fig 2 2 The measurement position of temperature sensor and Tc Fig 2 3 The measurement point of heat sink side flatness Approx 4 5 Approx 0 7 Approx 7 0 TOP VIEW SIDE VIEW Heat sink side Tc m...

Page 18: ...of High Side VB U V W 3 6 3 Function of Internal BSDs Boot Strap Diodes 3 9 4 Input Terminals IN HU HV HW IN LU LV LW 3 13 5 Over Current Protection Input Terminal IS 3 16 6 Fault Status Output Termi...

Page 19: ...ation Table 3 1 describes the behavior of the IPM for various control supply voltages A low impedance capacitor and a high frequency decoupling capacitor should be connected close to the terminals of...

Page 20: ...OM terminals The diode is connected to protect the IPM from the input surge voltage Don t use the diode for voltage clamp purpose otherwise the IPM might be damaged Fig 3 1 Control supply of high and...

Page 21: ...h of the fault output signal is 20 s and all lower side IGBTs are OFF state regardless of the input signal condition 3 UV is reset after tFO and VCCL exceeding VCCL ON then the fault output VFO is res...

Page 22: ...onstant high level regardless VCCH 2 After VCCH falls below VCCH OFF the upper side IGBT remains OFF state But the fault output VFO keeps high level 3 The HVIC starts to operate from the next input si...

Page 23: ...be well filtered with a low impedance capacitor and a high frequency decoupling capacitor connected close to the terminals in order to prevent malfunction of the internal control IC caused by a high...

Page 24: ...rically connected to the VB U V W U V W and COM terminals These diodes protect the IPM from an input surge voltage Don t use these diodes for a voltage clamp because the IPM might be destroyed if the...

Page 25: ...ds VB ON the HVIC starts to operate from the next input signal The fault output VFO is constant high level regardless VB 2 After VB falls below VB OFF the upper side IGBT remains OFF state But the fau...

Page 26: ...C t1 VCC Steady state VF Forward voltage of Boost strap diode D VCE sat Saturation voltage of lower side IGBT R Bootstrap resistance for inrush current limitation R Ib Charge current of bootstrap When...

Page 27: ...nrush current limitation R Ib Charge current of bootstrap When both the lower side IGBT and the upper side IGBT are OFF a regenerative current flows continuously through the freewheel path of the lowe...

Page 28: ...the lower side IGBT should be basically determined such that the time constant C R will enable the discharged voltage dV to be fully charged again during the ON period However if the control mode only...

Page 29: ...make a full charge of the bootstrap capacitor For reference the charging time of 10 F capacitor through the internal bootstrap diode is about 2ms Main Bus voltage V P N ON HVICs and LVIC supply voltag...

Page 30: ...resistance against the charging voltage is shown in Fig 3 14 1 5 10 15 20 1 10 100 1000 125 c 25 c Built in equivalent series resistance Rs Forward Voltage VF V 40 c Typical BSD Built in limiting res...

Page 31: ...ectly to the MPU It should not need the external pull up and down resistors connected to the input terminals input logic is active high and the pull down resistors are built in The RC coupling at each...

Page 32: ...r Therefore when using an external filtering resistor between the MPU output and input of the IPM please consider the signal voltage drop at the input terminals to satisfy the turn on threshold voltag...

Page 33: ...IGBT drive state versus ON pulse width of Control signal state A IGBT may turn on occasionally even when the ON pulse width of control signal is less than minimum tIN ON Also if the ON pulse width of...

Page 34: ...O is activated and all lower side IGBT shut down simultaneously after the over current protection delay time td IS Inherently there is dead time of LVIC in td IS t4 After the fault output pulse width...

Page 35: ...the MPU and the inrush current limitation resistance R1 which is more than 5k should be connected between the MPU and the VFO terminal These signal lines should be wired as short as possible Fault st...

Page 36: ...rically connected between TEMP and COM terminal as shown in Fig 3 12 The purpose of the diode is a protection of the IPM from an input surge voltage Don t use the diode as a voltage clamp circuit beca...

Page 37: ...terminal voltage is the same as the clamp voltage t2 t3 TEMP terminal voltage rises to the voltage determined by LVIC temperature In case the temperature is clamping operation the TEMP terminal volta...

Page 38: ...e IGBTs when the LVIC temperature exceeds TOH The fault status is reset when the LVIC temperature drops below TOH TOH hys t1 The fault status is activated and all IGBTs of the lower side arm shut down...

Page 39: ...lectric Co Ltd 4 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Connection of Bus Input terminal and Low Side Emitters 4 2 2 Setting of Shunt Resistor of Over Current Protection 4 3 Chapter 4 Power Term...

Page 40: ...to detect OC over current condition or phase currents A long wiring patterns between the shunt resistor and the IPM will cause excessive surge that might damage internal IC and current detection compo...

Page 41: ...hosen considering OC level required in practical application 4 2 2 Filter delay time setting of over current protection An external RC filter is necessary in the over current sensing circuit to preven...

Page 42: ...5 1 Fuji Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Examples of Application Circuits 5 2 2 Recommendation and Precautions in PCB design 5 5 Chapter 5 Recommended wiring and layout...

Page 43: ...tion tips and precautions in PCB design are described with example of application circuit Fig 5 1 and Fig 5 2 show examples of application circuits and their notes In these figures although two types...

Page 44: ...HW VB V VB W TEMP NC VB 7 TEMP Vcc IN GND OUT Vs VB Vcc IN GND OUT Vs VB 3 HVIC LVIC 3 BSD 6 IGBT 6 FWD D1 D1 D1 A C C C B B B Long GND wiring here might generate noise to input and cause IGBT malfunc...

Page 45: ...same level as the IPM OC trip reference voltage VIS ref 7 Please use high speed type comparator and logic IC to detect OC condition quickly 8 If negative voltage is applied to R1 during switching oper...

Page 46: ...ote The input signals are represented with IN HU 1 Overall design around the IPM A Keep a relevant creepage distance at the boundary Place a slit between there if needed B The pattern of the power inp...

Page 47: ...le A B B C D E Fig 5 4 Image of recommended PCB layout Power input part 3 Power supply for high side drive part A The pattern between VB U VB V VB W and the electronic components ceramic capacitor ele...

Page 48: ...is used please take into account the internal pull down resistors in this IPM and confirm the signal level in the actual system Fig 5 6 Image of recommended PCB layout Interface part E B A D C note T...

Page 49: ...t as possible to avoid OC level fluctuation and malfunction C In order to prevent false detection during switching operation it is recommended to connect a RC filter to the IS terminal The negative po...

Page 50: ...Fuji Electric Co Ltd 6 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Soldering to PCB 6 2 2 Mounting to Heat sink 6 3 3 Cooler Heat Sink Selection 6 4 Chapter 6 Mounting Guideline and Thermal Design...

Page 51: ...inal should be more than 1 5mm apart from the device When using flow soldering be careful to avoid immersing the package in the solder bath 3 It is not recommended to reuse the device after it is remo...

Page 52: ...2 0 5 0 5 3 5 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 30 32 36 37 38 39 40 0 1 Fig 6 2 shows the measurement position of heat sink flatness The heat sink flatness should be from 0 m 10...

Page 53: ...higher than Tj max it might cause damage to the chips The over heating OH protection function works when the IGBT junction temperature exceeds Tj max However if the temperature rises too quickly the...

Page 54: ...7 1 Fuji Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Precautions for use 7 2 2 Precautions on storage 7 2 3 Notice 7 3 Chapter 7 Cautions...

Page 55: ...igher than the threshold voltage Use this IPM within their reliability and lifetime under certain environments or conditions This IPM may fail before the target lifetime of your products if used under...

Page 56: ...anges in temperature to avoid condensation on the surface of the IPM Therefore store the IPM in a place where the temperature is steady The IPM should not be stored on top of each other since this may...

Page 57: ...for Room Air Conditioner Inverter for Compressor motor for heat pump applications 5 If you need to use a semiconductor product in this application note for equipment requiring higher reliability than...

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