Fuji Electric Co., Ltd.
2-3
MT6M12343 Rev.1.0
Dec.-2016
Chapter 2
Description of Terminal Symbols and Terminology
Item
Symbol
Description
Zero gate Voltage Collector
current
I
CES
Collector current when a specified voltage is applied between the collector and
emitter of an IGBT with all input signals L (=0V)
Collector-emitter saturation
voltage
V
CE(sat)
Collector-emitter voltage at a specified collector current when the input signal of
only the element to be measured is H (= 5V) and the inputs of all other elements
are L (=0V)
FWD
forward voltage drop
V
F
Forward voltage at a specified forward current with all input signals L (=0V)
Turn-on time
t
on
The time from the input signal rising above the threshold value until the collector
current becomes 90% of the rating. See Fig. 2-1.
Turn-on delay
t
d(on)
The time from the input signal rising above the threshold value until the collector
current decreases to 10% of the rating. See Fig. 2-1.
Turn-on rise time
t
r
The time from the collector current becoming 10% at the time of IGBT turn-on
until the collector current becomes 90%. See Fig. 2-1.
VCE-IC Cross time of turn-on
t
c(on)
The time from the collector current becoming 10% at the time of IGBT turn-on
until the
V
CE
voltage of IGBT dropping below 10% of the rating. See Fig. 2-1.
Turn-off time
t
off
The time from the input signal dropping below the threshold value until the
V
CE
voltage of IGBT becomes 90% of the rating. See Fig. 2-1.
Turn-off delay
t
d(off)
The time from the input signal dropping below the threshold value until the
collector current decreases to 90%. See Fig. 2-1.
Turn-on fall time
t
f
The time from the collector current becoming 90% at the time of IGBT turn-off
until the collector current decreases to 10%. See Fig. 2-1.
VCE-IC Cross time of turn-off
t
c(off)
The time from the
V
CE
voltage becoming 10% at the time of IGBT turn-off until
the collector current dropping below 10% of the rating. See Fig. 2-1.
FWD
Reverse recovery time
t
rr
The time required for the reverse recovery current of the built-in diode to
disappear. See Fig. 2-1.
(1) Inverter block
(2) Control circuit block
Item
Symbol
Description
Circuit current of
Low-side drive IC
I
CCL
Current flowing between control power supply V
CCL
and COM
Circuit current of
High-side drive IC
I
CCH
Current flowing between control power supply V
CCH
and COM
Circuit current of Bootstrap
circuit
I
CCHB
Current flowing between upper side IGBT bias voltage supply VB(U) and
U,VB(V) and V or VB(W) and W on the P-side (per one unit)
Input Signal threshold
voltage
V
th(on)
Control signal voltage when IGBT changes from OFF to ON
V
th(off)
Control signal voltage when IGBT changes from ON to OFF
Input Signal threshold
hysteresis voltage
V
th(hys)
The hysteresis voltage between
V
th(on)
and
V
th(off)
.
Operational input pulse
width
t
IN(on)
Control signal pulse width necessary to change IGBT from OFF to ON.
Refer Chapter 3 section 4.
Operational input pulse
width
t
IN(off)
Control signal pulse width necessary to change IGBT from ON to OFF.
Refer Chapter 3 section 4.
2. Description of Terminology
Table 2-2 Description of Terminology
