Fuji Electric Co., Ltd.
MT6M12343 Rev.1.0
Dec.-2016
1-9
Chapter 1 Product Outline
V
CE
,
I
C
=0
Short-circuit Current
≤
V
DC(Surge)
≤
V
DC
V
CE
,
I
C
=0
Collector-Emitter Current
≤
V
DC(Surge)
≤
V
DC
V
CES
:Absolute Maximum rating of IGBT Collector Emitter Voltage.
V
DC
:DC bus voltage Applied between P and N(*).
V
DC(Surge)
:The total of DC bus voltage and surge voltage which generated by the wiring
(or pattern) inductance from P-N(*) terminal to the bulk capacitor.
Fig. 1-6 The Collector- Emitter voltages to be considered.
Fig. 1-6 shows an example waveforms of turn-off and short-circuit of the IPM. The
V
DC(surge)
is different in
the each situation, therefore,
V
DC
should be set considering these situation.
V
CES
represents the absolute maximum rating of IGBT Collector-Emitter voltage. And
V
DC(Surge)
is specified
considering the margin of the surge voltage which is generated by the wiring inductance in this IPM.
Furthermore,
V
DC
is specified considering the margin of the surge voltage which is generated by the wiring
(or pattern) stray inductance between the P-N(*) terminal and the capacitor.
(a) In Turn-off Switching
(b) In Short-circuit
The absolute maximum rating of collector-emitter voltage of the IGBT is specified below.
During operation of the IPM, the voltage between P and N(*) is usually applied to one phase of upper or
lower side IGBT. Therefore, the voltage applied between P and N(*) must not exceed absolute maximum
ratings of IGBT. The Collector-Emitter voltages specified in absolute maximum rating are described below.
N(*): N(U),N(V),N(W)
The Collector Emitter Voltages specified in absolute maximum rating
