ES4441.1 Compact Error Simulation Module with Breakout Frontpanel - User´s guide
17
ETAS
Introduction
2.2
Functions and Features
This section provides a short overview of the functions and features of the
ES4441.1 Compact Error Simulation Module. A detailed description can be
found in the chapter "Hardware Features" on page 43.
2.2.1
Error Simulation
The ES4441.1 Compact Error Simulation Module makes it possible to simulate
errors in real time for 255 ECU channels (per ES4441.1).
Error Channels
The 255 failure simulation channels are for voltages up to 30 V and currents up
to 40 A.
• 40 A, 30V for 1 channel
• 20 A, 30V for 4 channel
• 15 A, 30V for 2 channel
• 7,5 A, 30V for 31 channel
• 3 A, 30V for 15 channel
• 1 A, 30V for 202 channel
Error Types
The following errors can be simulated for these 255 channels:
• "Open load"
• "Short cut" to +UBATT1, -UBATT1, +UBATT2, -UBATT2 for several signals
• "Pin to pin" with or without resistor
• "Resistor in line"
• Pull up/down resistor to +UBATT1, -UBATT1, +UBATT2, -UBATT2 for seve-
ral signals ("Leakage Current")
• "Loose Contacts"
• "Ground shift"
• "Loose Ground contact" (channel 340)
• "Loose Power contact" (channel 339)
Load can be disconnected while performing an error via relay or jumper.
Error Paths
There is a special low current path available for simulating errors with very low
current (50mA or less). In this path special low current MOSFETs are used in order
to reduce channel resistance and parasitic capacity. The path has to be chosen
before activating the error simulation by sending the ChooseCurrentPath com-
mand. If you do not send this command the high current path will be used for
error simulation.
Time Response
Errors can be switched via relay or MOSFET. The difference between switching an
error via a relay or via MOSFET is particularly seen in the time response. Whereas
MOSFETs have negligible switch times (approx. 50
μ
s), relays have high switch
