Ebyte E32 Series, User Manual

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SX1278 Wireless Module E32 Series User Manual
Copyright ©2012–2017, Chengdu Ebyte Electronic Technology Co., Ltd. 5 / 24
2. Technical parameters
2.1 General parameters
Model Core IC Size
Net weight
Operating
temperature
Operating
humidity
Storage
temperature
E32-TTL-100 SX1278
21 * 36 mm
6.7
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
E32-TTL-100S1 SX1278 17 * 25.5 mm 1.6
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
E32-T100S2 SX1278 17 * 30 mm 1.6
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
E32-TTL-500 SX1278 24 * 43 mm 8.2
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
E32-TTL-1W SX1278 24 * 43 mm 8.2
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
E32-433T30S SX1278 25*40.5mm 5.2
±
0.1g -40 ~ 85
℃
10% ~ 90% -40 ~ 125
°
C
2.2 Electrical Parameters
2.2.1 Transmitting current
Model Min Typ Max Unit Remarks
E32-TTL-100 100 110 120 mA
● When designing current supply circuit, 30% margin is
recommended to be remained so as to ensure long-term
stable operation of the whole module;
● The current at the instant of transmitting may be high,
but the total energy consumed may be lower due to very
short transmitting time;
● When using external antenna, the impedance matching
degree at different frequency points between antenna and
module may affect the transmitting current value at
different levels.
E32-TTL-100S1 100 110 120 mA
E32-T100S2 100 110 120 mA
E32-TTL-500 390 410 450 mA
E32-TTL-1W 570 610 670 mA
E32-433T30S 520 550 610 mA
2.2.2 Receiving current
Model Min Typ Max Unit Remarks
E32-TTL-100 13 14 15 mA
● The current consumed when the RF chip is only working
at receiving mode is called as receiving current，the tested
receiving current may be higher for some RF chips with
communication protocol or the developers have loaded
their own protocol to the whole module.
● The current at pure receiving mode will be mA level, the
users have to realize µA level receiving current through
firmware development.
E32-TTL-100S1 13 14 15 mA
E32-T100S2 13 14 15 mA
E32-TTL-500 19 20 22 mA
E32-TTL-1W 19 20 22 mA
E32-433T30S 22 23 25 mA