STS8DNH3LL characteristics
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4 STS8DNH3LL
characteristics
The STS8DNH3LL is a dual N-channel power MOSFET in SO-8 package (30 V, 0.018
Ω
,
8 A), featuring a low gate charge and STripFET™ III.
Figure 3.
STS8DNH3LL
●
V
DSS
= 30 V
●
R
DS(on)
= 0.018
Ω
●
I
D
= 8 A
Note:
Stresses above the limits shown in
Table 2
may cause permanent damage to the device.
Table 2.
STS8DNH3LL absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain source voltage (V
GS
= 0)
30
V
V
DGR
Drain gate voltage (R
GS
= 20 k
Ω
)
30
V
V
GS
Gate source voltage
± 16
V
I
D
Drain current (continuous) at T
C
= 25 °C
8
A
I
D
Drain current (continuous) at T
C
= 100 °C
5
A
I
DM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
32
A
P
tot
Total dissipation at T
C
= 25 °C
2
W
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