2-12
VPL-ES7
Memory structure of this model consists of the followings.
1 Set
memory
2 Status
memory
3 Picture
memory
4 W/B
memory
5 Aspct
memory
6 Common
memory
7 FLASH
ROM/EEPROM
*
*
The gamma memory is realized by giving offset to the Contrast and Brightness output values to the
devices in the gamma mode function.
Flow of data is described brie
fl
y. When the power plug is connected to the wall outlet for the
fi
rst time
(Standby state), all data that are stored in the internal ROM are written in the NVM (non-volatile memo-
ry). When the POWER is turned ON, all the status memory data and other memory data that are required
for the present picture are selected from each memory block and expanded in the internal RAM.
When any adjustment is performed at this moment, the adjustment data (user mode items) are written in
the NVM automatically triggered by the memory operation.
The adjustment items (W/B, V com) that can be adjusted in the Service Mode, are memorized in the NVM
at the time when the user performs adjustment and performs the memory operation. Note that the factory
adjustment data will be lost at this moment.