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ELECTRICAL DATA (4MHz)
S3F80JB
17-4
Table 17-2. D.C. Electrical Characteristics (Continued)
(T
A
= – 25
°
C to + 85
°
C, V
DD
= 1.7 V to 3.6 V)
Parameter Symbol
Conditions Min
Typ
Max
Unit
Supply Current
(note)
I
DD1
Operating Mode
V
DD
= 3.6 V
4 MHz crystal
–
5
9
mA
I
DD2
Idle Mode
V
DD
=3.6 V
4 MHz crystal
–
1.0
2.5
Stop
Mode
LVD OFF, V
DD
= 3.6 V
–
1 6
I
DD3
Stop Mode
LVD ON, V
DD
= 3.6 V
–
10 20
uA
NOTE:
Supply current does not include current drawn through internal pull-up resistors or external output current loads.
Table 17-3. Characteristics of Low Voltage Detect Circuit
(T
A
= – 25
°
C to + 85
°
C)
Parameter Symbol
Conditions Min
Typ
Max
Unit
Hysteresys voltage of LVD
(Slew Rate of LVD)
∆
V
– –
100
300
mV
Low level detect voltage for
back-up mode
LVD –
1.7
1.9
2.1
V
Low level detect voltage for
flag indicator
LVD_FLAG
–
1.95 2.15 2.35 V
NOTE:
The voltage gap between LVD and LVD FLAG is 250mV.
Table 17-4. Data Retention Supply Voltage in Stop Mode
(T
A
= – 25
°
C to + 85
°
C)
Parameter Symbol
Conditions Min
Typ
Max
Unit
Data retention supply
voltage
V
DDDR
–
1.5 – 3.6 V
Data retention supply
current
I
DDDR
V
DDDR
= 1.5 V
Stop Mode
– – 1
µ
A
Содержание S3F80JB
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Страница 327: ...ELECTRICAL DATA 8MHz S3F80JB 18 14 NOTES ...
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Страница 341: ...S3F80JB 2 This is only an example for setting Vdd This is SPW2 which is one of OPT MTP Writers ...
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