Renesas 3SK318, Техническое описание

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3SK318
Rev.2.00 Aug 10, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°
C)
Item Symbol Ratings Unit
Drain to source voltage V
DS
6 V
Gate1 to source voltage V
G1S
±6 V
Gate2 to source voltage V
G2S
±6 V
Drain current I
D
20 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 ° C
Storage temperature Tstg –55 to +150 ° C
Electrical Characteristics
(Ta = 25
°
C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
6 — — V I
D
= 200
µ
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown voltage V
(BR)G1SS
±6 — — V I
G1
= ±10
µ
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage V
(BR)G2SS
±6 — — V I
G2
= ±10
µ
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current I
G1SS
— — ±100 nA V
G1S
= ±5 V, V
G2S
= V
DS
= 0
Gate2 to source cutoff current I
G2SS
— — ±100 nA V
G2S
= ±5 V, V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage V
G1S(off)
0.5 0.7 1.0 V V
DS
= 5 V, V
G2S
= 3 V
I
D
= 100 µ A
Gate2 to source cutoff voltage V
G2S(off)
0.5 0.7 1.0 V V
DS
= 5 V, V
G1S
= 3 V
I
D
= 100
µ
A
Drain current I
DS(op)
0.5 4 10 mA V
DS
= 3.5 V, V
G1S
= 1.1 V
V
G2S
= 3 V
Forward transfer admittance |y
fs
| 18 24 32 mS V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f = 1 kHz
Input capacitance C
iss
1.3 1.6 1.9 pF
Output capacitance C
oss
0.9 1.2 1.5 pF
Reverse transfer capacitance C
rss
— 0.019 0.03 pF
V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f= 1 MHz
Power gain PG 18 21 — dB
Noise figure NF — 1.4 2.2 dB
V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f = 900 MHz