background image

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble 

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

   Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary 
   circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's 

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, 

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of 

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons.  It is 
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product 
information before purchasing a product listed herein.

   The information described here may contain technical inaccuracies or typographical errors.
   Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
   Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor 

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to 

evaluate all information as a total system before making a final decision on the applicability of the information and products.  Renesas Technology Corp. assumes 
no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life 

is potentially at stake.  Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a 
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater 
use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and 

cannot be  imported into a country other than the approved destination.

   Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

Sales Strategic Planning Div.    Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.
450 Holger  Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408)  382-7500, Fax: <1> (408)  382-7501

 

Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628)  585-100, Fax: <44> (1628)  585-900

 

Renesas Technology 

Hong Kong Ltd. 

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong   
Tel: <852> 2265-6688, Fax: <852> 2730-6071
 

Renesas Technology Taiwan Co., 

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 

Renesas Technology (Shanghai) Co., 

Ltd.

Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 

Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 
Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145

Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510

RENESAS SALES OFFICES

 

© 2005. Renesas Technology Corp., All rights reserved.  Printed in Japan. 

Colophon .3.0

 

Содержание 3SK318

Страница 1: ...0 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features Low noise characteristics NF 1 4 dB typ at f 900 MHz Excellent cross modulation characteristics Capable low voltage operation B 5V Outline 1 Source...

Страница 2: ...2 to source breakdown voltage V BR G2SS 6 V IG2 10 A VG1S VDS 0 Gate1 to source cutoff current IG1SS 100 nA VG1S 5 V VG2S VDS 0 Gate2 to source cutoff current IG2SS 100 nA VG2S 5 V VG1S VDS 0 Gate1 to...

Страница 3: ...mA Gate1 to Source Voltage VG1S V Drain Current vs Gate1 to Source Voltage VDS 3 5 V 2 0 V 2 5 V 1 5 V VG2S 1 0 V 20 16 12 8 4 0 1 2 3 4 5 Drain Current I D mA Gate2 to Source Voltage VG2S V Drain Cu...

Страница 4: ...5 V VG2S 3 V f 900 MHz VG2S 3 V ID 10 mA f 900 MHz 5 4 3 2 1 0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 Noise Figure NF dB Noise Figure vs Drain to Source Voltage Drain to Source Voltage VDS V Power Gain vs...

Страница 5: ...0 90 120 150 180 150 90 60 30 120 Scale 0 002 div 0 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Test Condition 50 to 1000 MHz 50...

Страница 6: ...75 0 0 983 15 3 400 0 972 24 1 2 28 147 6 0 00533 78 0 0 980 17 4 450 0 969 27 0 2 26 143 6 0 00588 71 6 0 976 19 6 500 0 954 29 7 2 23 140 0 0 00617 69 5 0 971 21 7 550 0 955 32 8 2 19 135 9 0 00666...

Страница 7: ...0 0 4 0 35 0 42 0 5 0 15 2 2 1 35 2 4 0 7 L1 0 1 0 5 0 6 0 05 0 05 0 45 0 9 Dimension in Millimeters Reference Symbol Min Nom Max A3 e2 0 6 b2 0 3 b3 0 4 b5 0 55 SC 82A 0 006g MASS Typ CMPAK 4 T CMPA...

Страница 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...

Отзывы: