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3SK318 

Rev.2.00  Aug 10, 2005  page 5 of 7 

 

V

DS

 = 3.5 V , V

G2S

 = 3 V

I

D

 = 10mA

V

DS

 = 3.5 V , V

G2S

 = 3 V

I

D

 = 10mA  

V

DS

 = 3.5 V , V

G2S

 = 3 V

I

D

 = 10mA 

V

DS

 = 3.5 V , V

G2S

 = 3 V

I

D

 = 10mA

10

5

4

3

2

1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

0

–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8 1

2

3 4 5

1.5

10

Scale: 1 / div.

0

°

30

°

60

°

90

°

120

°

150

°

180

°

–150

°

–90

°

–60

°

–30

°

–120

°

Scale: 0.002 / div.

0

°

30

°

60

°

90

°

120

°

150

°

180

°

–150

°

–90

°

–60

°

–30

°

–120

°

10

5

4

3

2

1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

0

–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8 1

2

3 4 5

1.5

10

Test Condition :

50  to  1000 MHz (50 MHz step)

S11 Parameter vs. Frequency

S21 Parameter vs. Frequency

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

Test Condition :

50  to  1000 MHz (50 MHz step)

Test Condition :

50  to  1000 MHz (50 MHz step)

Test Condition :

50  to  1000 MHz (50 MHz step)

 

 

Содержание 3SK318

Страница 1: ...0 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features Low noise characteristics NF 1 4 dB typ at f 900 MHz Excellent cross modulation characteristics Capable low voltage operation B 5V Outline 1 Source...

Страница 2: ...2 to source breakdown voltage V BR G2SS 6 V IG2 10 A VG1S VDS 0 Gate1 to source cutoff current IG1SS 100 nA VG1S 5 V VG2S VDS 0 Gate2 to source cutoff current IG2SS 100 nA VG2S 5 V VG1S VDS 0 Gate1 to...

Страница 3: ...mA Gate1 to Source Voltage VG1S V Drain Current vs Gate1 to Source Voltage VDS 3 5 V 2 0 V 2 5 V 1 5 V VG2S 1 0 V 20 16 12 8 4 0 1 2 3 4 5 Drain Current I D mA Gate2 to Source Voltage VG2S V Drain Cu...

Страница 4: ...5 V VG2S 3 V f 900 MHz VG2S 3 V ID 10 mA f 900 MHz 5 4 3 2 1 0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 Noise Figure NF dB Noise Figure vs Drain to Source Voltage Drain to Source Voltage VDS V Power Gain vs...

Страница 5: ...0 90 120 150 180 150 90 60 30 120 Scale 0 002 div 0 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Test Condition 50 to 1000 MHz 50...

Страница 6: ...75 0 0 983 15 3 400 0 972 24 1 2 28 147 6 0 00533 78 0 0 980 17 4 450 0 969 27 0 2 26 143 6 0 00588 71 6 0 976 19 6 500 0 954 29 7 2 23 140 0 0 00617 69 5 0 971 21 7 550 0 955 32 8 2 19 135 9 0 00666...

Страница 7: ...0 0 4 0 35 0 42 0 5 0 15 2 2 1 35 2 4 0 7 L1 0 1 0 5 0 6 0 05 0 05 0 45 0 9 Dimension in Millimeters Reference Symbol Min Nom Max A3 e2 0 6 b2 0 3 b3 0 4 b5 0 55 SC 82A 0 006g MASS Typ CMPAK 4 T CMPA...

Страница 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...

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