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2-Mbit (64K x 32) Pipelined Sync SRAM

CY7C1329H

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05673 Rev. *B

 Revised March 22, 2006

Features

• Registered inputs and outputs for pipelined operation

• 64K × 32 common I/O architecture 

• 3.3V core power supply

• 2.5V/3.3V I/O operation

• Fast clock-to-output times 

— 3.5 ns (for 166-MHz device)

— 4.0 ns (for 133-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel

®

 

Pentium

®

 interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed write

• Asynchronous output enable

• Offered in JEDEC-standard lead-free 100-pin TQFP 

package

• “ZZ” Sleep Mode Option

Functional Description

[1]

The CY7C1329H SRAM integrates 64K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE

1

), depth-expansion Chip Enables (CE

2

 and

 

CE

3

), Burst

Control inputs (ADSC, ADSP,  and ADV), Write Enables
(BW

[A:D]

 and BWE), and Global Write (GW). Asynchronous

inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle. This part supports Byte
Write operations (see Pin Descriptions and Truth Table for
further details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written. 

The CY7C1329H operates from a +3.3V core power supply
while all outputs operate with either a +2.5V or +3.3V supply.
All inputs and outputs are JEDEC-standard
JESD8-5-compatible.

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

Logic Block Diagram

ADDRESS
REGISTER

ADV

CLK

BURST

COUNTER 

AND

LOGIC

CLR

Q1

Q0

ADSP

ADSC

MODE

BWE

GW

CE

1

CE

2

CE

3

OE

ENABLE

REGISTER

OUTPUT

REGISTERS

SENSE

AMPS

OUTPUT

BUFFERS

E

PIPELINED

ENABLE

INPUT

REGISTERS

A0, A1, A

BW

B

BW

C

BW

D

BW

A

MEMORY

ARRAY

D Q s

       

SLEEP

CONTROL

ZZ

A

[1:0]

2

DQ

A

 

BYTE 

WRITE REGISTER

DQ

B

 

BYTE 

WRITE REGISTER

DQ

C

 

BYTE 

WRITE REGISTER

DQ

D

 

BYTE 

WRITE REGISTER

DQ

A

 

BYTE 

WRITE DRIVER

DQ

B

 

BYTE 

WRITE DRIVER

DQ

C

 

BYTE 

WRITE DRIVER

DQ

D

 

BYTE 

WRITE DRIVER

[+] Feedback 

Содержание CY7C1329H

Страница 1: ...GW Asynchronous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC are active Subsequent burst addresses can be internally generated as controlled by the Advance pin ADV Address data inputs and write controls are registered on chip to initiate a self timed W...

Страница 2: ...Q VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSC ADSP ADV A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 ...

Страница 3: ...input data pins OE is masked during the first clock of a Read cycle when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW When asserted it automatically increments the address in a burst cycle ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW A is captured in th...

Страница 4: ...ented to the DQ inputs is written into the corre sponding address location in the memory array If GW is HIGH then the Write operation is controlled by BWE and BW A D signals The CY7C1329H provides Byte Write capability that is described in the Write Cycle Descriptions table Asserting the Byte Write Enable input BWE with the selected Byte Write BW A D input will selectively write to only the desire...

Страница 5: ...0 Second Address A1 A0 Third Address A1 A0 Fourth Address A1 A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep mode standby current ZZ VDD 0 2V 40 mA tZZS Device operation to ZZ ZZ VDD 0 2V 2tCYC ns tZZREC ZZ recovery time ZZ 0 2V 2tCYC ns tZZI ZZ Active to sleep current This parameter is sampled 2tC...

Страница 6: ...le for Read Write 2 3 Function GW BWE BWD BWC BWB BWA Read H H X X X X Read H L H H H H Write Byte A DQA H L H H H L Write Byte B DQB H L H H L H Write Bytes B A H L H H L L Write Byte C DQC H L H L H H Write Bytes C A H L H L H L Write Bytes C B H L H L L H Write Bytes C B A H L H L L L Write Byte D DQD H L L H H H Notes 2 X Don t Care H Logic HIGH L Logic LOW 3 WRITE L when any one or more Byte ...

Страница 7: ...te Bytes D B H L L H L H Write Bytes D B A H L L H L L Write Bytes D C H L L L H H Write Bytes D C A H L L L H L Write Bytes D C B H L L L L H Write All Bytes H L L L L L Write All Bytes L X X X X X Truth Table for Read Write continued 2 3 Function GW BWE BWD BWC BWB BWA Feedback ...

Страница 8: ... 1 7 VDD 0 3V V VIL Input LOW Voltage 8 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 µA Input Current of MODE Input VSS 30 µA Input VDD 5 µA Input Current of ZZ Input VSS 5 µA Input VDD 30 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply Current VDD Max IOUT 0 mA f fMAX 1 tCYC 6 ns cycle 166 MHz 2...

Страница 9: ...istance Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W ΘJC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms OUTPUT R 317Ω R 351Ω 5 pF INCLUDING JIG AND SCOPE a b OUTPUT RL 50Ω Z0 50Ω VT 1 5V 3 3V ALL INPUT PULSES VDDQ GND 90 10 90 10 1 ns 1 ns c OUTPUT R 1667Ω R 1538Ω 5 pF INCLUDING JI...

Страница 10: ...ise 0 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 0 5 ns Notes 11 Timing reference level is 1 5V when VDDQ 3 3V and is 1 25V when VDDQ 2 5V 12 Test conditions shown in a of AC Test Loads unless otherwise noted 1...

Страница 11: ...r CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends burst Burst wraps around to its initial state tADVH tADVS tWEH tWES tADH tADS Q A2 Q A2 1 Q A2 2 Q A1 Q A2 Q A2 1 Q A2 3 A2 A3 Deselect cycle Burst continued with new base address DON T CARE UNDEFIN...

Страница 12: ...tADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ t ADVH t ADVS tWEH tWES tDH tDS GW tWEH tWES Byte write signals are ignored for first cycle when ADSP initiates burst ADSC extends burst ADV suspends burst DON T...

Страница 13: ...le is performed 20 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6 Data In D BURST READ Back to Back READs High Z Q A2 Q A1 Q A4 Q A4 1 Q A4 2 tWEH tWES Q A4 3 tOEHZ tDH tDS tOELZ tCLZ tCO Back to Back WRITEs A1 DON T CARE UNDEFINED A3 Feedback ...

Страница 14: ... entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 22 DQs are in High Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK ZZ t ZZREC ALL INPUTS except ZZ DON T CARE I DDZZ t ZZI tRZZI Outputs Q High Z DESELECT or READ Only Feedback ...

Страница 15: ...mpany names mentioned in this document may be trademarks of their respective holders Ordering Information Not all of the speed package and temperature ranges are available Please contact your local sales representative or visit www cypress com for actual products offered Speed MHz Ordering Code Package Diagram Package Type Operating Range 166 CY7C1329H 166AXC 51 85050 100 pin Thin Quad Flat Pack 1...

Страница 16: ...emiconductor Corporation on Page 1 from 3901 North First Street to 198 Champion Court Changed Three State to Tri State Modified Input Load to Input Leakage Current except ZZ and MODE in the Electrical Characteristics Table Modified test condition from VIH VDD to VIH VDD Replaced Package Name column with Package Diagram in the Ordering Information table Updated the Ordering Information Table Replac...

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