NXP Semiconductors
UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
Name
Function
GNDLV
isolated ground low-side phase V
VEELV
negative gate supply voltage low-side phase V
VCCLW
low-side phase W VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDLW
isolated ground low-side phase W
VEELW
negative gate supply voltage low-side phase W
VPWR
+12 V DC VPWR low voltage positive supply connection
VPWR GND
VPWR low voltage supply ground connection (GND1)
Table 5. Power supply test point descriptions
...continued
6.2.7 Gate drive resistors
•
RGH_1 - gate high resistor in series with the GH_1 pin at the output of the GD3162
high-side driver and IGBT/SiC gate that controls the strong turn on current for IGBT/SiC
gate.
•
RGH_2 - gate high resistor in series with the GH_2 pin at the output of the GD3162
high-side driver and IGBT/SiC gate that controls the weak turn on current for IGBT/SiC
gate.
•
RGL_1 - gate low resistor in series with the GL_1 pin at the output of the GD3162
low-side driver and IGBT/SiC gate that controls the strong turn off current for IGBT/SiC
gate.
•
RGL_2 - gate low resistor in series with the GL_2 pin at the output of the GD3162
low-side driver and IGBT/SiC gate that controls the weak turn off current for IGBT/SiC
gate.
•
RAMC - series resistor between IGBT/SiC gate and active Miller clamp (AMC) input pin
of the GD3162 high-side/low-side driver for gate sensing and active Miller clamping.
Figure 8. Gate drive resistors for each phase high side and low side
UM11802
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User manual
Rev. 1 — 10 June 2022
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