IFR — Nonvolatile information register found in each flash block, separate from the
main memory array.
NVM — Nonvolatile memory. A memory technology that maintains stored data during
power-off. The flash array is an NVM using NOR-type flash memory technology.
NVM Normal Mode — An NVM mode that provides basic user access to FTFE
resources. The CPU or other bus masters initiate flash program and erase operations (or
other flash commands) using writes to the FCCOB register group in the FTFE module.
Phrase — 64 bits of data with an aligned phrase having byte-address[2:0] = 000.
Longword — 32 bits of data with an aligned longword having byte-address[1:0] = 00.
Word — 16 bits of data with an aligned word having byte-address[0] = 0.
Program flash — The program flash memory provides nonvolatile storage for vectors
and code store.
Program flash sector — The smallest portion of the program flash memory (consecutive
addresses) that can be erased.
Retention — The length of time that data can be kept in the NVM without experiencing
errors upon readout. Since erased (1) states are subject to degradation just like
programmed (0) states, the data retention limit may be reached from the last erase
operation (not from the programming time).
RWW— Read-While-Write. The ability to simultaneously read from one memory
resource while commanded operations are active in another memory resource.
Section program buffer — Lower quarter of the FlexRAM allocated for storing large
amounts of data for programming via the Program Section command.
Secure — An MCU state conveyed to the FTFE module as described in the Chip
Configuration details for this device. In the secure state, reading and changing NVM
contents is restricted.
16.3 External signal description
The FTFE module contains no signals that connect off-chip.
External signal description
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