NXP Semiconductors A3M38SL039, Руководство пользователя

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Electrical characteristics
A3M38SL039 Airfast Power Amplifier Module with Autobias Control, Rev. 0, September 2022
Data Sheet: Technical Data 4 / 33
1.2 Functional pin description
Table 1. Functional pin description
Pin Number Pin Function Pin Description
1 V
DC2
Carrier Drain Supply, Stage 2
2 V
DC1
Carrier Drain Supply, Stage 1
3, 5, 6, 8, 14, 17, 22, 23, 25, 26, 27, 28, 29,
30, 31, 32, 33, 34, 35, 36, 37, 38
GND Ground
4, 18, 21 N.C. No Connection
7 RF
in
RF Input Signal @ 50 Ohm
9 A1 I 2 C Address A1 (tri-state, tie to 5 V, tie to ground or leave
floating)
10 A0 I 2 C Address A0 (tri-state, tie to 5 V, tie to ground or leave
floating)
11 SCLK SPI/I 2 C Serial Clock Signal (1.8 V JEDEC compatible)
12 SDA SPI/I 2 C Serial Data Signal (1.8 V JEDEC compatible)
13 CS_B Chip Selection Bar for SPI (1.8 V JEDEC compatible)
15 Tx_EN PA Enable Signal (1.8 V JEDEC compatible)
16 V
CC
_+5V 5 V V
CC
Power Source for Autobias Chip
19 V
DP1
Peaking Drain Supply, Stage 1
20 V
DP2
Peaking Drain Supply, Stage 2
24 RF
out
RF Output Signal @ 50 Ohm
2 Electrical characteristics
2.1 Ratings
2.1.1 Maximum ratings
Table 2. Maximum ratings
Rating Symbol Value Unit
Operating Voltage Range V
CC
_+5V 4.75 to 5.25 Vdc
5 V
CC
Slew Rate, T
C
= 25°C V
CC
_+5V_SLEW 9.5 ms
Operating Voltage Range V
DD
24 to 30 Vdc
Operating Voltage Range A1, A0 4.75 to 5.25 Vdc
Operating Voltage Range CS_B
,
SDA
,
SCLK,
Tx_EN
1.65 to 1.95 Vdc
Storage Temperature Range T
stg
–65 to +150
°
C
Case Operating Temperature T
C
125
°
C
Peak Input Power
(3800 MHz, Pulsed CW, 10 µsec(on), 10% Duty Cycle) P
in
25 dBm