562
CHAPTER 26 ROM CORRECTION
V
DD
V
DD
V
DD
PD78078, 78078Y Subseries
EEPROM
SCK0
SB1
P32
SCL
SDA
CS
CE
µ
RA78K/0
EEPROM
Source program
00
10
0D
02
9B
02
10
00H
01H
02H
FFH
CSEG AT 1000H
ADD A, #2
BR !1002H
26.4 ROM Correction Application
(1) Store the correction address and instruction after correction (patch program) to nonvolatile memory (such
as EEPROM
TM
) outside the microcontroller.
When two places should be corrected, store the branch destination judgment program as well. The branch
destination judgment program checks which one of the addresses set to CORAD0 or CORAD1 generates
the correction branch.
Figure 26-4. Storing Example to EEPROM (when One Place is Corrected)
Figure 26-5. Connecting Example with EEPROM (Using 2-Wire Serial I/O Mode)
Содержание PD78076
Страница 2: ...2 MEMO ...
Страница 12: ...12 MEMO ...
Страница 48: ...48 MEMO ...
Страница 64: ...64 MEMO ...
Страница 82: ...82 MEMO ...
Страница 100: ...100 MEMO ...
Страница 130: ...130 MEMO ...
Страница 180: ...180 MEMO ...
Страница 222: ...222 MEMO ...
Страница 248: ...248 MEMO ...
Страница 288: ...288 MEMO ...
Страница 308: ...308 MEMO ...
Страница 364: ...364 MEMO ...
Страница 494: ...494 MEMO ...
Страница 526: ...526 MEMO ...
Страница 544: ...544 MEMO ...
Страница 558: ...558 MEMO ...
Страница 580: ...580 MEMO ...
Страница 596: ...596 MEMO ...
Страница 598: ...598 MEMO ...
Страница 626: ...626 MEMO ...