TS-570 0
S P E C I FI CATI O N S
Item
Mode
N u m ber of memory c h a n n e l s
Ante n n a i m pedance
S u pply voltage
G ro u n d i n g method
...I
<(
C u rrent
Tra n s m it (Max.)
a:
w
Rece ive ( N o s i g n a l )
2
w
Usable temperatu re ra nge
(.!)
Freq u e n cy sta b i l ity (-1 0°C to + 50°C)
Freq uency accu racy (At room temperature)
D i mensions [W x H x D J
( P roj ections i n c l u ded)
Weight
Freq u e n cy ra nge
1 60 m ba n d
80m ba n d
4 0 m b a n d
30m b a n d
20m ba n d
1 7 m ba n d
1 5m b a n d
1 2 m band
1 0m ba n d
a:
O utput power"5
S S B , CW, FSK, F M
Max.
w
�
M i n .
�
AM
Max.
CJ)
z
M i n .
<(
a:
Modu lation
SSB
....
F M
AM
Spurious emissions
Carrier s u ppression
U nwanted sideband s u ppression ( M o d u l ation frequency 1 . 0 k H z)
Maxi m u m freq uency deviation ( F M )
Wide
N a rrow
XIT sh ift freq uency ra nge
M icrophone i m p pedance
* 1 1 .8 1 M H z : E u rope, France, H o l l a n d ; 1 .83 M H z . B e l g i u m , Spain
* 2 1 . 85M Hz : B e l g i u m , Fra n ce, H o l l a n d , Spa i n
* 3 3 . 8 M H z : E u rope, B e l g i u m , France, H o l la n d , Spa i n
*4 7 . 1 M Hz : E u rope, B e l g i u m , France, H o l l a n d , Spa i n
* 5 B e l g i u m , Spa i n : 1 O W fixed on 1 60 m band
Ratin g
J 3 E ( L S B , U S B ) , A 1 A (CW) , A3 E (AM ) , F3 E ( F M ) , F l D ( F S K)
1 00
50Q (With Ante n n a Tuner 1 6 . 7 to 1 50Q)
DC 1 3 .8V ± 1 5 %
Negative ground
2 0 . 5A
2A
-1 0°c to +50°C (+ 1 4°F to + 1 22°F)
With i n ± 1 O P P M
Wit h i n ± 1 O P P M
270 x 96 x 270 m m/1 0 . 6 x 3 . 8 x 1 0 . 6 i n
( 2 8 1 x 1 07 x 3 1 4 m m/1 1 1 x 4. 2 x 1 2 .4 i n )
Approx. 6 . 8 kg ( 1 5 lbs)
1 . s·1 to 2 O., M H z
3 . 5 t o 4.0"3 M H z
7 . 0 t o 7 . 3 "4M H z
1 0 . 1 to 1 0 . 1 5 M H z
1 4. 0 to 1 4 . 3 5 M H z
1 8 . 068 t o 1 8 . 1 68 M H z
2 1 . 0 t o 2 1 .45 M H z
24.89 t o 24.99 M H z
2 8 . 0 to 2 9 . 7 M H z
1 00W
5W
2 5W
5W
B a l a n ced
Reacta nce
Low level
-50dB or less
40d B or more
40d B or more
± 5 kHz or less
± 2 . 5k H z o r less
± 9 . 99k Hz
SQ
1 1 9
