Kenwood TKR-740, Руководство по обслуживанию

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TKR-740
45
Po OUTPUT POWER f=135-175M Hz, 30 W
η
t TOTAL EFFICIENCY Vdd=12.5V, Vgg=5V, 40 W
2fo 2nd HARM ONIC Pin=50mW –25 dBc
3fo 3rd HARM ONIC –30 dBc
VSWRin INPUT VSWR 3:1 -
Idd LEAKAGE CURRENT Vdd=17V, Vgg=0V, Pin=0mW 1 mA
f=135-175MHz, Po=30W(Vgg No degration
- LOAD VSWR TOLERANCE control), Vdd=15.2V, Pin=50mW, or destroy -
LOAD VSWR=20:1
f=135/155/175MHz, No over
- STABILITY
Vdd=10/12.5/15.2V, Vgg=0~5V, –60 dBc
-
Pin=25/50/70mW, Po 30W, Parasitic
LOAD VSWR=3:1 oscillation
SEMICONDUCTOR DATA
POWER MODULE : RA30H1317M (TX UNIT IC301)
■
M AXIM UM RATINGS (Tc=25°C, Zg=ZI=50
Ω
)
Vdd SUPPLY VOLTAGE Vgg 5.0V, Zg=ZI=50
Ω
17 V
Vgg GATE BIAS VOLTAGE
Vdd 12.5V, Pin=50mW,
6 V
Zg=ZI=50
Ω
Idd DRAIN CURRENT 10 A
Pin INPUT POWER f=135-175MHz, Vgg 5.0V 100 mW
Po OUTPUT POWER f=135-175MHz, Vgg 5.0V 45 W
Tc(op) OPERATION CASE TEMPERATURE f=135-175MHz, Vgg 5.0V
–30 to
°C
+110
Tstg STORAGE TEM PERATURE
–40 to
°C
+110
Symbol Parameter Conditions Ratings Unit
■
ELECTRICAL CHARACTERISTICS (Tc=25°C, Zg=ZI=50
Ω
)
Symbol Parameter Conditions
LIM IT
Unit
MIN MAX