IC BLOCK DIAGRAMS AND TERMINAL DESCRIPTIONS -85
TERMINAL DESCRIPTION
TX-NR905/NA905
Q212: M29W128FL70 (128 Mbit Flash Memory)
1. Address Inputs (A0-A22)
The Address Inputs select the cells in the memory array to access during Bus Read
operations.
2. Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
3. Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
4. Data Input/Output or Address Input (DQ15A-1)
When the device is in x16 Bus mode, this pin behaves as a Data Input/Output pin (as DQ8-
DQ14). When the device is in x8 Bus mode, this pin behaves as an address pin; DQ15A-1.
5. Chip Enable (E)
The Chip Enable pin, E, activates the memory, allowing Bus Read and Bus Write operations.
6. Output Enable (G)
The Output Enable pin, G, controls the Bus Read operation of the memory.
7. Write Enable (W)
The Write Enable pin, W, controls the Bus Write operation of the memory’s Command
Interface.
8. V PP/ Write Protect (VPP /WP)
The V
PP
/Write Protect pin provides two functions. The V
PP
function allows the memory to
use an external high voltage power supply to reduce the time required for Program
operations.
The Write Protect function provides a hardware method of protecting the highest or lowest
block.
9. Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all the blocks previously protected using a High Voltage
10. Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or erase operation.
11. Byte/Word Organization Select (BYTE)
It is used to switch between the x8 and x16 Bus modes of the memory.
12. VCC supply voltage (7V to 3.6V)
V
CC
provides the power supply for all operations (Read, Program and Erase).
13. Vss ground
V
SS
is the reference for all voltage measurements.
