Rev. 1.0, 03/01, page 82 of 280
START
End of programming
Set SWE bit in FLMCR1
Write pulse application subroutine
Wait 1
µ
s
Apply Write Pulse
End Sub
Set PSU bit in FLMCR1
WDT enable
Disable WDT
Wait 50
µ
s
Set P bit in FLMCR1
Wait (Wait time=programming time)
Clear P bit in FLMCR1
Wait 5
µ
s
Clear PSU bit in FLMCR1
Wait 5
µ
s
n= 1
m= 0
No
No
No
Yes
Yes
Yes
Yes
Wait 4
µ
s
Wait 2
µ
s
Wait 2
µ
s
Apply
Write pulse
Set PV bit in FLMCR1
Set block start address as
verify address
H'FF dummy write to verify address
Read verify data
Verify data =
write data?
Reprogram data computation
Additional-programming data computation
Clear PV bit in FLMCR1
Clear SWE bit in FLMCR1
m = 1
m= 0 ?
Increment address
Programming failure
No
Clear SWE bit in FLMCR1
Wait 100
µ
s
No
Yes
n
≤
6?
No
Yes
n
≤
6 ?
Wait 100
µ
s
n
≤
1000 ?
n
←
n + 1
Write 128-byte data in RAM reprogram
data area consecutively to flash memory
Store 128-byte program data in program
data area and reprogram data area
Apply Write Pulse
Sub-Routine-Call
128-byte
data verification completed?
Successively write 128-byte data from additional-
programming data area in RAM to flash memory
Figure 7-3 Program/Program-Verify Flowchart
Table 7-4 Reprogram Data Computation Table
Program Data
Verify Data
Reprogram Data
Comments
0
0
1
Programming completed
0
1
0
Reprogram bit
1
0
1
—
1
1
1
Remains in erased state
Содержание H8/3670F-ZTAT HD64F3670
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