GS66504B-EVBDB 650V
GaN E-HEMT Evaluation Board
User’s Guide
_____________________________________________________________________________________________________________________
GS66504B-EVBDB UG rev. 161120
© 2016 GaN Systems Inc.
www.gansystems.com 4
Please refer to the Evaluation Board/Kit Important Notice on page 29
Figure 3 GS66504B-EVBDB bottom side
A.
2x GaN Systems 650V E-HEMT GS66504B, 15A/100mΩ
B.
Decoupling capacitors C4-C11
C.
Isolated gate driver Silab Si8271GB-IS
D.
Optional current shunt position JP1.
E.
Test points for bottom Q2 V
GS
.
F.
Recommended probing positions for Q2 V
DS
.
G.
Optional RC Snubber (RS1/CS1, RS2/CS2), not populated
H.
5V-9V isolated DC/DC gate drive power supply
GaN E-HEMTs:
This daughter board includes two GaN Systems E-HEMT GS66504B (650V/15A, 100m
Ω
) in a
GaNPx™ B type package. The large S pad serves as source connection and thermal pad.
Figure 4 Package outline of GS66504B
