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GS66504B-EVBDB 650V  

GaN E-HEMT Evaluation Board 

User’s Guide 

_____________________________________________________________________________________________________________________ 

GS66504B-EVBDB UG rev. 161120 

© 2016 GaN Systems Inc.    

www.gansystems.com                          22 

 

Please refer to the Evaluation Board/Kit Important Notice on page 29 

Appendix A - GS66504B-EVBDB 

Circuit schematics 

 

 

T

P1

T

PT

H

-1M

M

PS2

PES1-S5-S9-M

GN

D

1

VI

N

2

+

VO

5

0V

4

NC

8

Q1G

T

P2

T

PT

H

-1M

M

0V

VD

R

V

T

P4

T

PT

H

-1M

M

C

14

4.

7uF

C

0805

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U2

SI

8271GB-I

S

VI

1

VD

D

I

2

GN

D

I

3

EN

4

GN

D

A

5

VO-

6

VO+

7

VD

D

8

T

P6

T

PT

H

-1M

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GN

D

H

C

16

4.

7uF

C

0805

R9

3.

3K

LED

2

LED

-0603

GN

D

L

VD

D

L_+

9V

U4

SI

8271GB-I

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VI

1

VD

D

I

2

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I

3

EN

4

GN

D

A

5

VO-

6

VO+

7

VD

D

8

D1

600V 

1A

D

O-214AC

T

P3

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PH

R1

0R

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0805

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6.

2V

SOD

323-AC

A

C

R

15

1K

T

P5

T

PT

H

-1M

M

Q2S

DNP

DNP

T

P7

T

PSM

D

-1m

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ir

PW

M

H

PW

M

L

C

19

4.

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0805

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6V

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P8

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-1m

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T

P9

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L_+

6V

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P10

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PSM

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-1m

m

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J2

1

2

3

4

5

6

GN

D

L

VEEH

VC

C

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5V

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0V

C4

C5

GN

D

H

C6

C7

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N

+

EN

ABLE

PW

M

H

_I

N

PGN

D

PW

M

L_I

N

GN

D

H

C

20

1uF

GN

D

H

J

P1

C

ON

-J

M

P-C

SH

U

N

T

PH

R8

3.

3K

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D

L_+

6V

C

15

4.

7uF

C

0805

GN

D

L

DZ2

6.

2V

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323-AC

A

C

R

16

1K

C

21

4.

7uF

C

0805

VEEL

EN

ABLE

VEEL

GN

D

L

C

22

1uF

GN

D

L

C

ON

1

C

ON

-ED

GE-M

N

T

-3260

C

ON

2

C

ON

-ED

GE-M

N

T

-3260

C

ON

3

C

ON

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GE-M

N

T

-3260

VC

C

_+

5V

R2

3.

3K

EN

ABLE

PW

M

H

_I

N

F

B2

0R

PW

M

L_I

N

PS1

PES1-S5-S9-M

GN

D

1

VI

N

2

+

VO

5

0V

4

NC

8

VD

R

V

0V

0V

R6

15R

R7

2R

Q1_GOU

T

VD

R

V

C1

4.

7uF

C

0805

VD

D

H

_+

6V

GN

D

H

F

B1

0R

VD

R

V

VC

C

_+

5V

VSW

V

D

C

+

V

D

C

-

PW

M

H

_I

N

R5

10R

Q1_VO+

Q1_VO-

GN

D

H

R4

3.

3K

R

10

3.

3K

C2

4.

7uF

C

0805

R

11

10R

PW

M

L_I

N

C9

C

10

C

12

1uF

C

11

0.

1uF

 1k

V

C

1812

PGN

D

VI

N

-

Q2S

C8

VD

D

H

_+

6V

C

13

1uF

VC

C

_+

5V

0V

Q1

GS66504B

1

2

3

Q2

GS66504B

1

2

3

R3

3.

3K

LED

1

LED

-0603

VD

D

H

_+

9V

EN

ABLE

R

13

3.

3K

R

S1

33R

R

1206

C

S1

100p 

1k

V

C

1206

Q2G

F

B3

0R

R

12

15R

DNP

DNP

R

14

2R

Q2_GOU

T

Q2_VO+

GN

D

L

Q2_VO-

C

17

1uF

R

S2

33R

R

1206

C

S2

100p 

1k

V

C

1206

VD

D

L_+

6V

C

18

1uF

DNP

DNP

0V

VC

C

_+

5V

VEEH

J1

1

2

3

4

5

6

Содержание GS66504B-EVBDB GaN E-HEMT

Страница 1: ...m for the latest version of this user s guide DANGER This evaluation kit is designed for engineering evaluation in a controlled lab environment and should be handled by qualified personnel ONLY High voltage will be exposed on the board during the test and even brief contact during operation may result in severe injury or death Never leave the board operating unattended After it is de energized alw...

Страница 2: ...board and universal mother board ordering part numbers are below Table 1 Ordering part numbers Part Number GaN E HEMT P N Description GS66502B EVBDB GS66502B GaN E HEMT 650V 7 5A 200mΩ GS66504B EVBDB GS66504B GaN E HEMT 650V 15A 100mΩ GS66508B EVBDB GS66508B GaN E HEMT 650V 30A 50mΩ GS66508T EVBDB GS66508T GaN E HEMT top side cooled 650V 30A 50mΩ GS66516T EVBDB GS66516T GaN E HEMT top side cooled ...

Страница 3: ...he Evaluation Board Kit Important Notice on page 29 The 3 power pins are VDC Input DC Bus voltage VSW Switching node output VDC Input DC bus voltage ground return Note that control ground 0V is isolated from VDC Figure 1 GS665XXX EVBDB Evaluation Board Block Diagram GS66504B EVBDB half bridge daughter board Figure 2 GS66504B EVBDB top side Si8271 Iso Gate Driver Q1 Q2 Si8271 Iso Gate Driver Iso DC...

Страница 4: ...m side A 2x GaN Systems 650V E HEMT GS66504B 15A 100mΩ B Decoupling capacitors C4 C11 C Isolated gate driver Silab Si8271GB IS D Optional current shunt position JP1 E Test points for bottom Q2 VGS F Recommended probing positions for Q2 VDS G Optional RC Snubber RS1 CS1 RS2 CS2 not populated H 5V 9V isolated DC DC gate drive power supply GaN E HEMTs This daughter board includes two GaN Systems E HE...

Страница 5: ...n be directly controlled by the gate resistor By default the turn on Rgate R6 R12 is 15Ω and turn off gate resistor R7 R14 is 2Ω User can adjust the values of gate resistors to fine tune the turn on and off speed FB1 FB2 are 0603 footprints for optional ferrite beads for damping gate ringing oscillation By default they are populated with 0Ω jumpers If gate oscillation is observed it is recommended...

Страница 6: ... 0 1Ω If current shunt is not used JP1 must be shorted JP1 affects the power loop inductance and its inductance should be kept as low as possible Use a copper foil or jumper with low inductance CAUTION Check the JP1 before the first time use To complete the circuit JP1 needs to be either shorted or a current shunt must be inserted before powering up Figure 6 Current shunt position JP1 Measurement ...

Страница 7: ...TIM is needed to provide electrical insulation and conformance to the PCB surface The daughter board evaluation kit supplies with a sample 35x35mm fin heatsink not installed although other heatsinks can also be used to fit users system design 3 A thermal tape type TIM Berguist Bond Ply 100 is chosen for its easy assembly The supplied heatsink has the thermal tape pre applied so simply peel off the...

Страница 8: ...ems provides a universal 650V mother board ordering part number GS665MB EVB sold separately that can be used as the basic evaluation platform for all the daughter boards The universal 650V mother board evaluation kit includes following items 1 Mother board GS665MB EVB 2 12VDC Fan 12V input The board can be powered by 9 12V on J1 On board voltage regulator creates to 5V for daughter board and contr...

Страница 9: ...als non inverted and inverted controlled by J7 input with dead time or external high low side drive signals from J5 users own control board An on board dead time generation circuit is included on the mother board Dead time is controlled by two RC delay circuits R6 C12 and R5 C11 The default dead time is set to about 100ns Additionally two potentiometers locations are provided TR1 TR2 not included ...

Страница 10: ...ate signals to daughter board TP9 TP10 VDC VDC DC bus voltage TP11 TP12 VOUT VDC Output voltage TP6 TP5 VSW VDC Switching node output voltage for HV oscilloscope probe Power connections CON1 CON7 mounting pads are designed to be compatible with following mounting terminals 10 32 Screw mount Banana Jack PCB mount Keystone P N 575 4 or PC Mount Screw Terminal Keystone P N 8191 Output passives L and ...

Страница 11: ...up until t1 The period of first pulse Ton1 defines the switching current ISW VDS TON1 L 3 t1 t2 is the free wheeling period when the inductor current IL forces Q1 to conduct in reverse 4 t1 turn off and t2 turn on are of interest for this test as they are the hard switching trasients for the half bridge circuit when Q2 is under high switching stress 5 The second pulse t2 t3 is kept short to limit ...

Страница 12: ...T RLoad This is standard half bridge configuration that can be used in following circuits Synchronous Buck DC DC Single phase half bridge inverter ZVS half bridge LLC Phase leg for full bridge DC DC or Phase leg for a 3 phase motor drive Jumper setting J4 Q1 INT J6 Q2 INT_INV Boost mode CON1 Q1 CON2 Q2 VDC CON4 CON3 LIN VDC CON7 CON6 VSW CON5 INPUT VIN When the output becomes the input and the loa...

Страница 13: ...r to the Evaluation Board Kit Important Notice on page 29 Using GS665XXX EVBDB in system The daughter board allows users to easily evaluate the GaN performance in their own systems Refer to the footprint drawing of GS665XXX EVBDB as shown below Figure 13 Recommended footprint drawing of daughter board GS665XXX EVBDB 1 3 5 2 4 6 7 8 9 1 All units are in mm 2 Pin 1 6 Dia 1mm 3 Pin 7 9 1 91mm 75mil m...

Страница 14: ...nect PWM input gate signal 0 5V to J7 If it is generated from a signal generator ensure the output mode is high Z mode c Set J4 to OFF position and J7 to INT d Set High voltage HV DC supply voltage to 0V and ensure the output is OFF Connect HV supply to CON2 and CON6 e Use HV probe between TP6 and TP5 for Vds measurement f Connect external inductor between CON1 and CON3 Use current probe to measur...

Страница 15: ...___________________________________________________________________________________________ GS66504B EVBDB UG rev 161120 2016 GaN Systems Inc www gansystems com 15 Please refer to the Evaluation Board Kit Important Notice on page 29 Figure 14 Double pulse test setup example GS66504B EVBDB ...

Страница 16: ...ue to the rising drain current di dt in the power loop ΔV Lpxdi dt where Lp is the total power loop inductance After the drain current reaches the inductor current the Vds starts to fall The Vgs undershoot spike is caused by the miller feedback via Cgd under negative dv dt Due to the low gate charge and small RG OFF GaN E HEMT gate has limited control on the turn off dv dt Instead the Vds rise tim...

Страница 17: ...systems com 17 Please refer to the Evaluation Board Kit Important Notice on page 29 a hard switching turn on 400V 15A tf 5 9ns b hard switching turn off 400V 15A Figure 16 Double puls test switching transient waveforms Switching Loss energy Eon Eoff measurement A T M search coaxial current shunt SDN 414 10 0 1Ω is installed for switching loss measurement as shown below Figure 17 Eon Eoff measureme...

Страница 18: ...e on page 29 Figure 18 Eon Eoff measurement and test bench setup The switching energy can be calculated from the measured switching waveform Psw Vds Id The integral of the Psw during switching period is the measured switching loss The channel deskewing is critical for measurement accurary It is recommended to manually deskew Id against Vds as shown in Figure 19 The drain current spike is caused by...

Страница 19: ...rent from 0 to 15A can be found in Figure 21 The turn on loss dominates the overall hard switching loss Eon at 0A is the Qoss loss caused by charging Coss at high side switch The turn off loss remain almost constant from 0A up to 10A about 3 6uJ the measured Eoff matches well with the Eoss 400V which indicates that turn off energy is dominated by Eoss the energy required to charge Coss from 0V to ...

Страница 20: ...________________________________________________________________________________________ GS66504B EVBDB UG rev 161120 2016 GaN Systems Inc www gansystems com 20 Please refer to the Evaluation Board Kit Important Notice on page 29 Figure 21 GS66504B Switching Loss Measurement VDS 400V TJ 25 C ...

Страница 21: ... com 21 Please refer to the Evaluation Board Kit Important Notice on page 29 Synchronous Buck Test L 120uH VIN 400V VOUT 200V D 50 FSW 100 kHz POUT 750W The board is converted to a synchronous buck DC DC converter and demonstrates efficiency 98 5 at 750W With forced air cooling the peak device temperature TJ_MAX was measured at 60 C at 750W output Figure 22 Synchronous Buck Efficiency and thermal ...

Страница 22: ... TEST POINT INPUT CONNECTORS VDDH_ 6V TP8 TPSMD 1mm cir TP9 TPSMD 1mm cir VDDL_ 6V TP10 TPSMD 1mm cir J2 1 2 3 4 5 6 GNDL VEEH VCC_ 5V VDRV 0V C4 C5 GNDH C6 C7 VIN ENABLE PWMH_IN PGND PWML_IN GNDH C20 1uF GNDH JP1 CON JMP CSHUNT PH R8 3 3K Q1G VDDL_ 6V C15 4 7uF C0805 GNDL DZ2 6 2V SOD323 AC A C R16 1K C21 4 7uF C0805 VEEL ENABLE VEEL GNDL C22 1uF GNDL CON1 CON EDGE MNT 3260 CON2 CON EDGE MNT 3260...

Страница 23: ..._________________________________________________________________________________________________ GS66504B EVBDB UG rev 161120 2016 GaN Systems Inc www gansystems com 23 Please refer to the Evaluation Board Kit Important Notice on page 29 Assembly Drawing Top Assembly Drawing Bottom ...

Страница 24: ...__________________________________________________________________________________________ GS66504B EVBDB UG rev 161120 2016 GaN Systems Inc www gansystems com 24 Please refer to the Evaluation Board Kit Important Notice on page 29 PCB layout Top Layer Mid Layer 1 Mid Layer 2 Bottom Layer ...

Страница 25: ...INSTALL 8 3 FB1 FB2 FB3 RES 0R JUMPER 1 0603 30R 3A R0603 generic generic Use 0 OHM JUMPER 9 1 JP1 CURRENT SHUNT JUMPER CON JMP CSHUNT JP CSHUNT DO NOT INSTALL 10 1 J1 CONN 3PIN DUAL ROW 0 1 PITCH R A CON HDR 2X3 con 2X3 P100 RA SAMTEC TSW 103 08 G D RA HARWIN INC M20 9950345 11 1 J2 CON 6POS con 1x6 p100 FOR FCT TEST POINTS DO NOT INSTALL 12 2 LED1 LED2 LED GREEN SMD 0603 LED SMD 0603 LED 0603 LI...

Страница 26: ... R1206 R2 100R R1206 U2A 74VHC132 3 1 2 14 7 0V R1 49R9 0V D2 PMEG2005EB SOD523 VDC TR2 2K C12 100pF 0V U2B 74VHC132 4 5 6 U2C 74VHC132 9 10 8 U2D 74VHC132 12 13 11 VDC CON5 1 CON7 1 TP3 TP4 TP1 TP2 TP7 5V TP8 0V 0V VAUX 12V IN EXTERNAL PWM INPUT TO DSP MCU CONTROL BOARD PWM INPUT SELECTION ON BOARD DEAD TIME GENERATION CIRCUIT USE TR1 AND TR2 TO ADJUST DEAD TIME POS 2 3 INTERNAL PWM SIGNAL VOUT C...

Страница 27: ...________________________________________________________________________________________________ GS66504B EVBDB UG rev 161120 2016 GaN Systems Inc www gansystems com 27 Please refer to the Evaluation Board Kit Important Notice on page 29 Assembly drawing Assembly Top Assembly Bottom ...

Страница 28: ...OCK HDR 2POS R A 5 08MM CON TERM BLK 2POS RA TE CONNECTIVITY 796638 2 11 1 J1 PLUG TERM BLOCK BLUG 2POS 5 08MM TE CONNECTIVITY 796634 2 12 1 J2 CONN RCPT 6POS 100 DBL STR PCB CON RCPT 2X3 BOT HARWIN M20 7850342 MOUNT FROM BOTTOM SIDE 13 1 J3 CON 2POS CONNECTOR FOR 12V FAN DO NOT INSTALL 14 2 J4 J6 CONN HEADER 8POS DUAL VERT PCB CON JMP 4POS HARWIN M20 9980445 15 1 J5 CONN 8 POS DUAL ROW 2 54MM CON...

Страница 29: ... kit may be returned within 30 days from the date of delivery for a full refund THE FOREGOING WARRANTY IS THE EXCLUSIVE WARRANTY MADE BY THE SELLER TO BUYER AND IS IN LIEU OF ALL OTHER WARRANTIES EXPRESSED IMPLIED OR STATUTORY INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE EXCEPT TO THE EXTENT OF THIS INDEMNITY NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ANY IND...

Страница 30: ... are not designed authorized or warranted for use in lifesaving life sustaining military aircraft or space applications nor in products or systems where failure or malfunction may result in personal injury death or property or environmental damage The information given in this document shall not in any event be regarded as a guarantee of performance GaN Systems hereby disclaims any or all warranti...

Страница 31: ...Mouser Electronics Authorized Distributor Click to View Pricing Inventory Delivery Lifecycle Information GaN Systems GS66504B EVBDB ...

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