Gan Systems GS66502B-EVBDB, Руководство пользователя

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A. 2x GaN Systems 650V E-HEMT GS66508T(30A/50mΩ) or GS66516T (60A/25 mΩ). The PCB
footprints are universal and compatible for both packages
B. 5V-9V isolated DC/DC gate drive power supply
C. Decoupling capacitors C4-C11
D. Isolated gate driver Silab Si8271
E. Optional current shunt position JP1.
F. Test points for bottom Q2 V
GS
.
G. Recommended probing positions for Q2 V
DS
.
H. Holes for temperature monitoring of Q1/Q2
I. M3 mounting screw for heatsink
J. (Optional) RC snubber circuit

This daughter board includes two GaN Systems E-HEMT GS66508T (650V/30A, 50m Ω ) or
GS66516T (650V/60A, 25m
Ω)
in a GaNPx™ Top cooled T type package, . The thermal pad on the
top of device is internally connected to the source. Electrical insulation will be needed for
heatsink attachment. GaNPx™ T package also features dual symmetrical gate for easier
paralleling and PCB layout.