Model
MASS 2
Version
V_1.0
Prepared by
H/W
Date
22/01/2008
Subject Technical
Manual Page
55/59
( GSM850,GSM900 and DCS,PCS Power Amplifier Module)
Figure 50. RF3166 Block Diagram
The RF3166 is a high-power, high-efficiency power amplifier module with integrated power control that provides
over 50dB of control range. The device is a self-contained6mmx6mm module with 50
Ω
input and output terminals.
The device is designed for use as the final RF amplifier inGSM850, EGSM900, DCS and PCS handheld digital
cellular equipment and other applications in the 824MHz to849MHz, 880MHz to 915MHz, 1710MHz to
1785MHzand 1850MHz to 1910MHz bands. The RF3166 incorporates RFMD’s latest VBATT tracking circuit,
which monitors battery voltage and prevents the power control loop from reaching saturation. The VBATT tracking
circuit eliminates the need to monitor battery voltage, thereby minimizing switching transients. The RF3166
requires no external routing or external components, simplifying layout and reducing board space.
The VRamp Range is from 0.26V to 2.1V. And the R400, R401, C406 is a Voltage divider for fine tuning and
Low pass filter of 300Khz.
The Input/Output Impedance is 50ohm. So, The PCB Design must be designed with 50ohm strobe line.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern
has been designed to address thermal, power dissipation and electrical requirements of the device as well as
accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with
0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If
micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar
results.
Содержание MASS2
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