Cypress S6E2C1 Series, Руководство пользователя

Страница: 8 / 71

MainFlash Memory
S6E2CC/C5/C4/C3/C2/C1 Series Flash Programming Specification, Document Number: 002-04913 Rev. *D 8
1.2 Configuration
This series consists of 1064 KBytes to 2088 KBytes MainFlash memory area, a security code area, a High-Speed CR
trimming data area, a HTM code area, and a general purpose data area. The MainFlash memory consists of Flash Macro
#0 and Flash Macro #1. Also the security code area, the High-Speed CR trimming data area the HTM code area, and the
general purpose data area are belonged to the Flash Macro #0.
Figure 1-1 to Figure 1-4 shows the address and sector structure of the MainFlash memory built into this series as well as
the address of security/CR trimming data/HTM/general purpose data.
See "CHAPTER Flash Security" for details on the security.
See Section " 1.4.10 CRTRMM (CR Trimming Data Mirror Register) " and CHAPTER High-Speed CR Trimming" of the
"FM4 Family Peripheral Manual" for details on the High-Speed CR trimming.
Table 1-1 MainFlash Memory Capacity of Each Product
Memory Capacity 1024 KB + 40 KB 1536 KB + 40 KB 2048 KB + 40 KB
product
S6E2C18
S6E2C28
S6E2C38
S6E2C48
S6E2C58
S6E2CC8
S6E2C19
S6E2C29
S6E2C39
S6E2C49
S6E2C59
S6E2CC9
S6E2C1A
S6E2C2A
S6E2C3A
S6E2C4A
S6E2C5A
S6E2CCA