Document Number: 002-00886 Rev. *B
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
System Interface String
Addresses
(x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Ch
38h
0036h
V
CC
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0006h
Typical timeout per single byte/word write 2
N
µs
20h
40h
0006h
Typical timeout for buffer write 2
N
µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2
N
ms
22h
44h
0013h = 1 Gb
0012h = 512 Mb
0011h = 256 Mb
0010h = 128 Mb
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0005h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)