ATtiny15L
56
Low-voltage Serial Programming Characteristics
Figure 35.
Low-voltage Serial Programming Timing
Electrical Characteristics
MOSI
MISO
SCK
t
OVSH
t
SHSL
t
SLSH
t
SHOX
t
SLIV
Table 27.
Low-voltage Serial Programming Characteristics
T
A
= -40
°
C to 85
°
C, V
CC
= 2.7 - 5.5V (Unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
1/t
CLCL
RC Oscillator Frequency (V
CC
= 2.7 - 5.5V)
0.8
1.6
MHz
t
CLCL
RC Oscillator Period (V
CC
= 2.7 - 5.5V)
625
1250
ns
t
SHSL
SCK Pulse-width High
2 t
CLCL
ns
t
SLSH
SCK Pulse-width Low
2 t
CLCL
ns
t
OVSH
MOSI Setup to SCK High
t
CLCL
ns
t
SHOX
MOSI Hold after SCK High
2 t
CLCL
ns
t
SLIV
SCK Low to MISO Valid
10
16
32
ns
Table 28.
Minimum wait delay after the Chip Erase instruction
Symbol
2.7V
4.0V
5.0V
t
WD_ERASE
6 ms
5 ms
4 ms
Table 29.
Minimum wait delay after writing a Flash or EEPROM location
Symbol
2.7V
4.0V
5.0V
t
WD_PROG_EE
6 ms
5 ms
4 ms
t
WD_PROG_FL
3 ms
2.5 ms
2 ms
Absolute Maximum Ratings
Operating Temperature.................................. -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature ..................................... -65°C to +150°C
Voltage on any Pin except RESET
with respect to Ground ................................-1.0V to V
CC
+0.5V
Voltage on RESET with respect to Ground......-1.0V to +13.0V
Maximum Operating Voltage ............................................ 6.0V
DC Current per I/O Pin ............................................... 40.0 mA
DC Current
V
CC
and GND Pins................................ 100.0 mA
