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AT90S8414
Preliminary
4-75
Programming the Flash and EEPROM
Atmel’s AT90S8414 offers 8K bytes of in-system reprogrammable Flash Program memory and 256 bytes of EEPROM
Data memory.
The AT90S8414 is normally shipped with the on-chip Flash Program and EEPROM Data memory arrays in the erased
state (i.e. contents = $FF) and ready to be programmed. This device supports a High-Voltage (12V) Parallel
programming mode and a Low-Voltage Serial programming mode. The serial programming mode provides a convenient
way to download the Program and Data into the AT90S8414 inside the user’s system.
The Program and Data memory arrays on the AT90S8414 are programmed byte-by-byte in either programming modes.
An auto-erase cycle is provided with the self-timed programming operation in the serial programming mode.
Parallel Programming
To be determined
Serial Downloading
Both the Program and Data memory arrays can be programmed using the serial SPI bus while
R E S E T
is pulled to GND.
The serial interface consists of pins SCK, MOSI (input) and MISO (output). After
R E S E T
is set low, the Programming
Enable instruction needs to be executed first before program/erase operations can be executed.
An auto-erase cycle is built into the self-timed programming operation (in the serial mode ONLY) and there is no need to
first execute the Chip Erase instruction. The Chip Erase operation turns the content of every memory location in both the
Program and EEPROMarrays into $FF.
The Program and EEPROM memory arrays have separate address spaces:
$0000 to $1FFF for Program memory and $0000 to $00FF for EEPROM memory.
Either an external system clock is supplied at pin XTAL1 or a crystal needs to be connected across pins XTAL1 and
XTAL2. The maximum serial clock (SCK) frequency should be less than 1/4 of the crystal frequency. With a 10 MHz
oscillator clock, the maximum SCK frequency is 2.5 MHz.
Содержание AT90S8414
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Страница 68: ...4 68 AT90S8414 Preliminary Figure 53 PORTC Schematic Diagram Pins PC0 PC7...
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