ASROCK Rack C422 WSI/IPMI, Руководство пользователя

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C422 WSI/IPMI / X299 WSI/IPMI
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English
Primary Timing
CAS# Latency (tCL)
The time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
The number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
The number of clock cycles required between the issuing of the precharge
command and opening the next row.
RAS# Active Time (tRAS)
The number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
The delay between when a memory chip is selected and when the first active command
can be issued.
Secondary Timing
Write Recovery Time (tWR)
The amount of delay that must elapse after the completion of a valid write
operation, before an active bank can be precharged.
Refresh Cycle Time (tRFC)
The number of clocks from a Refresh command until the first Activate command
to the same rank.
RAS to RAS Delay (tRRD)
The number of clocks between two rows activated in different banks of the same
rank.