
TMP92CZ26A
92CZ26A-646
Write cycle
Variable
No. Parameter Symbol
Min Max
80MHz 60MHz Unit
t
DW
1.0T
−
10.0
−
6.6
16-1
D0 ~ D15 valid
→
WR
xx rising at 0 waits
t
DW
1.0T
−
6.0
6.5
−
t
DW4
3.0T
−
10.0
−
39.8
16-2
D0 ~ D15 valid
→
WR
xx rising at 2 waits/4 waits
t
DW6
5.0T
−
6.0
56.5
−
t
WW
1.0T
−
7.0
−
9.6
17-1
WR
xx low width at 0 waits
t
WW
1.0T
−
4.0
8.5
−
t
WW4
3.0T
−
7.0
−
42.8
17-2
WR
xx low width at 2 waits/4 waits
t
WW6
5.0T
−
4.0
58.5
−
18 A0 ~ A23 valid
→
WR
falling
t
AW
0.5T
−
5.0
1.25
3.3
19
WR
xx falling
→
SDCLK rising
t
WK
0.5T
−
5.0
1.25
3.3
20
WR
xx rising
→
A0 ~ A23 hold
t
WA
0.5T
−
5.0
1.25
3.3
21
WR
xx rising
→
D0 ~ D15 hold
t
WD
0.5T
−
5.0
1.25
3.3
t
RDO
0.5T
−
2.0
−
6.3
22-1
RD
rising
→
D0 ~ D15 output
t
RDO
0.5T
−
1.0
5.25
−
t
RDO
1.5T
−
2.0
−
22.9
22-2
RD
rising
→
D0 ~ D15 output
t
RDO
2.5T
−
1.0
30.25
−
t
SWP
1.0T
−
7.0
−
9.6
23 Write width for SRAM
t
SWP
1.0T
−
4.0
8.5
−
t
SBW
1.0T
−
7.0
−
9.6
24
Data byte control ~ end of write
for SRAM
t
SBW
1.0T
−
4.0
8.5
−
25 Address setup time for SRAM
t
SAS
0.5T
−
5.0
1.25
3.3
26 Write recovery time for SRAM
t
SWR
0.5T
−
5.0
1.25
3.3
t
SDS
1.0T
−
10.0
−
6.6
27 Data setup time for SRAM
t
SDS
1.0T
−
6.0
6.5
−
28 Data hold time for SRAM
t
SDH
0.5T
−
5.0
1.25
3.3
ns
AC measuring condition
Note:
The operation guarantee Temperature: 80MHz: Ta=0
∼
50
°
C, less than 60MHz: Ta=0
∼
70
°
C