STMicroelectronics STM32F042C4, Manual

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STM32F042xx Electrical characteristics
94
6.3.4 Embedded reference voltage
The parameters given in Table 25 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions .
V
PVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69 V
Falling edge 2.37 2.48 2.59 V
V
PVD5
PVD threshold 5
Rising edge 2.57 2.68 2.79 V
Falling edge 2.47 2.58 2.69 V
V
PVD6
PVD threshold 6
Rising edge 2.66 2.78 2.9 V
Falling edge 2.56 2.68 2.8 V
V
PVD7
PVD threshold 7
Rising edge 2.76 2.88 3 V
Falling edge 2.66 2.78 2.9 V
V
PVDhyst
(1)
PVD hysteresis - 100 - mV
I
DD(PVD)
PVD current consumption - 0.15 0.26
(1)
μ A
1. Guaranteed by design, not tested in production.
Table 24. Programmable voltage detector characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 25. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage
–40 °C < T
A
< +105 °C 1.16 1.2 1.25 V
–40 °C < T
A
< +85 °C 1.16 1.2 1.24
(1)
1. Data based on characterization results, not tested in production.
V
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
4
(2)
2. Guaranteed by design, not tested in production.
- - μ s

V
REFINT
Internal reference voltage
spread over the
temperature range
V
DDA
= 3 V - -
10
(2)
mV
T
Coeff
Temperature coefficient
- 100
(2)
-
100
(2)
ppm/°C