STMicroelectronics STM32F031C4, Manual

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STM32F031x4 STM32F031x6 Electrical characteristics
86
V
hys
Schmitt trigger
hysteresis
TC and TTa I/O - 200
(1)
-
mV FT and FTf I/O - 100
(1)
-
BOOT0 - 300
(1)
-
I
lkg
Input leakage
current
(2)
TC, FT and FTf I/O

TTa in digital mode

V
SS

V
IN

V
DDIOx
- -

0.1
µA
TTa in digital mode

V
DDIOx

V
IN

V
DDA
- - 1
TTa in analog mode

V
SS

V
IN

V
DDA
- -

0.2
FT and FTf I/O
(3) 
V
DDIOx

V
IN

5 V
- - 10
R
PU
Weak pull-up
equivalent resistor
(4)
V
IN

V
SS
25 40 55 k

R
PD
Weak pull-down
equivalent
resistor
(4)
V
IN

V
DDIOx
25 40 55 k

C
IO
I/O pin capacitance - - 5 - pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:
I/O current injection susceptibility .
3. To sustain a voltage higher than V
DDIOx
+ 0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 46. I/O static characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
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