STMicroelectronics STM32F031C4, Manual

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Electrical characteristics STM32F031x4 STM32F031x6
44/113 DocID025743 Rev 3
6.3.4 Embedded reference voltage
The parameters given in Table 22 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions .
V
PVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69 V
Falling edge 2.37 2.48 2.59 V
V
PVD5
PVD threshold 5
Rising edge 2.57 2.68 2.79 V
Falling edge 2.47 2.58 2.69 V
V
PVD6
PVD threshold 6
Rising edge 2.66 2.78 2.9 V
Falling edge 2.56 2.68 2.8 V
V
PVD7
PVD threshold 7
Rising edge 2.76 2.88 3 V
Falling edge 2.66 2.78 2.9 V
V
PVDhyst
(1)
PVD hysteresis - 100 - mV
I
DD(PVD)
PVD current consumption - 0.15 0.26
(1)
µA
1. Guaranteed by design, not tested in production.
Table 21. Programmable voltage detector characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 22. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage
–40 °C < T
A
< +105 °C 1.16 1.2 1.25 V
–40 °C < T
A
< +85 °C 1.16 1.2 1.24
(1)
1. Data based on characterization results, not tested in production.
V
t
START
ADC_IN17 buffer startup
time
- - - 10
(2)
µs
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4
(2)
2. Guaranteed by design, not tested in production.
- - µs

V
REFINT
Internal reference voltage
spread over the
temperature range
V
DDA
= 3 V - -
10
(2)
mV
T
Coeff
Temperature coefficient -
- 100
(2)
-
100
(2)
ppm/°C
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