L6482
Electrical characteristics
Doc ID 023768 Rev 1
13/73
SRgate
Gate driver output slew rate
I
GATE
= 96 mA
V
CC
= 15 V
C
GATE
= 15 nF
6
V/
μ
s
Deadtime and blanking
t
DT
Programmable deadtime
(2)
TDT= '00000'
125
ns
TDT=’11111’
4000
t
blank
Programmable blanking time
(2)
TBLANK= '000'
125
ns
TBLANK=’111’
1000
Logic
V
IL
Low level logic input voltage
0.8
V
V
IH
High level logic input voltage
2
V
I
IH
High level logic input current
V
IN
= 5 V, VDDIO = 5 V
1
µA
I
IL
Low level logic input current
V
IN
= 0 V, VDDIO = 5 V
-1
µA
V
OL
Low level logic output voltage
(3)
V
DD
= 3.3 V, I
OL
= 4
mA
0.3
V
V
DD
= 5 V, I
OL
= 4 mA
0.3
V
OH
High level logic output voltage
V
DD
= 3.3 V, I
OH
= 4
mA
2.4
V
V
DD
= 5 V, I
OH
= 4 mA
4.7
R
PUCS
CS pull-up resistor
430
k
Ω
R
PDRST
STBY/RESET pull-down resistor
450
R
PUSW
SW pull-up resistor
80
t
high,STCK
Step-clock input high time
300
ns
t
low,STCK
Step-clock input low time
300
ns
Internal oscillator and external oscillator driver
f
osc,int
Internal oscillator frequency
T
j
= 25 °C,
-5%
16
+5% MHz
f
osc,ext
Programmable external oscillator frequency
8
32
MHz
V
OSCOUTH
OSCOUT clock source high level voltage
Internal oscillator
2.4
V
V
OSCOUTL
OSCOUT clock source low level voltage
Internal oscillator
0.3
V
t
rOSCOUT
t
fOSCOUT
OSCOUT clock source rise and fall time
Internal oscillator
10
ns
t
high
OSCOUT clock source high time
Internal oscillator
62.5
ns
t
extosc
Internal to external oscillator switching delay
3
ms
t
intosc
External to internal oscillator switching delay
100
µs
Table 5.
Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ.
Max. Unit
