Silicon Laboratories Si8410, Manual, Page: 8 / 38

S i 8 4 1 0 / 2 0 / 2 1 ( 5 k V )
S i 8 4 2 2 / 2 3 ( 2 . 5 & 5 k V )
8 Rev. 1.1
Table 2. Electrical Characteristics
(V
DD1
= 3.3 V ±10%, V
DD2
= 3.3 V ±10%, T
A
= –40 to 125 °C)
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ V
DD1
, V
DD2
rising 2.15 2.3 2.5 V
VDD Negative-Going Lockout
Hysteresis VDD
HYS
45 75 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.6 — 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.1 — 1.4 V
Input Hysteresis V
HYS
0.40 0.45 0.50 V
High Level Input Voltage V
IH
2.0 — — V
Low Level Input Voltage V
IL
— — 0.8 V
High Level Output Voltage V
OH
loh = –4 mA V
DD1
,V
DD2
– 0.4 3.1 — V
Low Level Output Voltage V
OL
lol = 4 mA — 0.2 0.4 V
Input Leakage Current I
L
— — ±10 µA
Output Impedance (Si8410/20)
1
Z
O
— 50 —

DC Supply Current (All inputs 0 V or at supply)
Si8410Ax, Bx
V
DD1
V
DD2
V
DD1
V
DD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC —
—
—
— 1.0
1.0
3.0
1.0 1.5
1.5
4.5
1.5
mA
Si8420Ax, Bx
V
DD1
V
DD2
V
DD1
V
DD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC —
—
—
— 1.3
1.7
5.8
1.7 2.0
2.6
8.7
2.6
mA
Si8421Ax, Bx
V
DD1
V
DD2
V
DD1
V
DD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC —
—
—
— 1.7
1.7
3.7
3.7 2.6
2.6
5.6
5.6
mA
Si8422Ax, Bx
V
DD1
V
DD2
V
DD1
V
DD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC —
—
—
— 3.7
3.7
1.7
1.7 5.6
5.6
2.6
2.6
mA
Si8423Ax, Bx
V
DD1
V
DD2
V
DD1
V
DD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC —
—
—
— 5.4
1.7
1.3
1.7 8.1
2.6
2.0
2.6
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50

, ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.