Silicon Laboratories Si8410, Manual, Page: 17 / 38

Rev. 1.1 17
S i 8 4 1 0 / 2 0 / 2 1 ( 5 k V )
S i 8 4 2 2 / 2 3 ( 2 . 5 & 5 k V )
Table 7. Insulation and Safety-Related Specifications
Parameter Symbol Test Condition
Value
Unit
WB
SOIC-16
NB
SOIC-8
Nominal Air Gap (Clearance)
1
L(IO1) 8.0 min 4.9 min mm
Nominal External Tracking (Creepage)
1
L(IO2) 8.0 min 4.01 min mm
Minimum Internal Gap (Internal Clearance)
0.014 0.008 mm
Tracking Resistance
(Proof Tracking Index)
PTI IEC60112 600 600 V
RMS
Erosion Depth
ED 0.019 0.040 mm
Resistance (Input-Output)
2
R
IO
10
1,2
10
1,2 
Capacitance (Input-Output)
2
C
IO
f = 1 MHz 2.0 1.0 pF
Input Capacitance
3
C
I
4.0 4.0 pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Wide Body SOIC”, “9. Package Outline: 8-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage
limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does
not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and
creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter Test Conditions Specification
NB SOIC8 WB SOIC 16
Basic Isolation Group Material Group I I
Installation Classification
Rated Mains Voltages < 150 V
RMS
I-IV I-IV
Rated Mains Voltages < 300 V
RMS
I-III I-IV
Rated Mains Voltages < 400 V
RMS
I-II I-III
Rated Mains Voltages < 600 V
RMS
I-II I-III