Silicon Laboratories Si8410, Manual, Page: 18 / 38

S i 8 4 1 0 / 2 0 / 2 1 ( 5 k V )
S i 8 4 2 2 / 2 3 ( 2 . 5 & 5 k V )
18 Rev. 1.1
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxx*
Parameter
Symbol Test Condition
Characteristic
Unit
WB
SOIC-16
NB SOIC-8
Maximum Working Insulation
Voltage
V
IORM
891 560 Vpeak
Input to Output Test Voltage
Method b1
(V
IORM
x 1.875 = V
PR
, 100%
Production Test, t
m
= 1 sec,
Partial Discharge < 5 pC)
1671 1050
Transient Overvoltage
V
IOTM
t = 60 sec 6000 4000 Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
2 2
Insulation Resistance at T
S
,
V
IO
= 500 V
R
S
>10
9
>10
9 
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values
1
Parameter Symbol Test Condition Min Typ
Max
Unit
WB
SOIC-16
NB
SOIC-8
Case Temperature T
S
— — 150 150 °C
Safety Input, Output, or
Supply Current I
S

JA
= 140 °C/W (NB SOIC-8),
100 °C (WB SOIC-16),
V
I
= 5.5 V, T
J
= 150 °C, T
A
= 25 °C
— — 220 160 mA
Device Power
Dissipation
2
P
D
— — 150 150 mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si84xx is tested with VDD1 = VDD2 = 5.5 V, T
J
= 150 ºC, C
L
= 15 pF, input a 150 Mbps 50% duty cycle square
wave.